Theory of low frequency noise in Si MOST's

Berz, F.

doi:10.1016/0038-1101(70)90142-5

Cited by 72 publications

(10 citation statements)

References 18 publications

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“…Two major theories have been developed to explain the physical origin of flicker (1/ f ) noise in MOS devices, namely, the number fluctuation theory (NFT) [ 25 , 26 , 27 ] originally proposed by McWhorter [ 28 ] and the bulk mobility fluctuation theory (MFT) based on Hooge’s model [ 29 ]. According to the NFT, flicker noise arises from random trapping and detrapping of carriers at defects near the MOS surface and near the MOS/insulator interface (ZnO/SiO 2 interface in this study).…”

Section: Electrical Characterizationmentioning

confidence: 99%

Signal-to-Noise Enhancement of a Nanospring Redox-Based Sensor by Lock-in Amplification

Bakharev

McIlroy

2015

Sensors

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A significant improvement of the response characteristics of a redox chemical gas sensor (chemiresistor) constructed with a single ZnO coated silica nanospring has been achieved with the technique of lock-in signal amplification. The comparison of DC and analog lock-in amplifier (LIA) AC measurements of the electrical sensor response to toluene vapor, at the ppm level, has been conducted. When operated in the DC detection mode, the sensor exhibits a relatively high sensitivity to the analyte vapor, as well as a low detection limit at the 10 ppm level. However, at 10 ppm the signal-to-noise ratio is 5 dB, which is less than desirable. When operated in the analog LIA mode, the signal-to-noise ratio at 10 ppm increases by 30 dB and extends the detection limit to the ppb range.

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Section: Electrical Characterizationmentioning

confidence: 99%

Signal-to-Noise Enhancement of a Nanospring Redox-Based Sensor by Lock-in Amplification

Bakharev

McIlroy

2015

Sensors

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“…This simulation was run 50 times and averaged to reduce error. Analogous to [8], to simulate the effect of multiple traps with different time constants, all traps are assumed statistically independent of each other. The RTS generated by each trap can then be added to compute the total noise.…”

Section: Simulation Of Flicker Noise In DC Biased Transistorsmentioning

confidence: 99%

A Study Of Flicker Noise In MOS Transistor Under Switched Bias Condition

Miguez¹,

Arnaud²

2007

ECS Trans.

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This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only ShockleyRead-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental measurements. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations; this behavior is not correctly addressed by previously reported noise models of switched MOSFET.

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“…Various experimental observations have suggested that the surface of the semiconductor can cause type noise [7], [8], [17], [18]. The surface noise is attributed to the existence of traps at the semiconductor surface and deep-level traps inside the oxide and oxide-semiconductor interface [17], [19], [20]- [22]. McWhorter lifetime distribution using a model based on the tunneling of the carriers from semiconductor surface to the traps within the oxide and oxide semiconductor interface was used to explain the surface noise [1], [22].…”

Section: Simplified Picture Of Traps Responsible For Low-frequenmentioning

confidence: 99%

“…The surface noise is attributed to the existence of traps at the semiconductor surface and deep-level traps inside the oxide and oxide-semiconductor interface [17], [19], [20]- [22]. McWhorter lifetime distribution using a model based on the tunneling of the carriers from semiconductor surface to the traps within the oxide and oxide semiconductor interface was used to explain the surface noise [1], [22]. On the contrary, in the theory presented here, there is no need to account for a tunneling mechanism to explain surface noise.…”

Section: Simplified Picture Of Traps Responsible For Low-frequenmentioning

confidence: 99%

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A nonfundamental theory of low-frequency noise in semiconductor devices

Mohammadi

Pavlidis

2000

IEEE Trans. Electron Devices

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A general low-frequency noise theory based on the fluctuation in the number of carriers is presented. In this theory, the low-frequency noise is attributed to the traps within the bandgap of a semiconductor, which are the sources of the generation-recombination noise. The cumulative effect of the generation-recombination noise from each trap center generates a 1 type noise. It is shown that in fact, 1 noise may have any frequency dependence between 1 0-1 2. If not masked by thermal noise, the low-frequency noise generated from these traps becomes 1 2 at very high frequencies. Also, if the lifetime of the carriers in the semiconductor under nonequilibrium condition is finite, at very low frequencies, the noise spectral density reaches a plateau. While this theory can be applied to any semiconductor device, only heterojunction bipolar transistors (HBTs) were considered in details. Based on this theory, a model for low-frequency noise in the base of HBTs is derived. Frequency and current dependence of low-frequency noise are modeled. Results of the base noise measurements in AlGaAs/GaAs HBTs were found to agree with the noise theory presented here. This significant theory, for the first time, proves the possibility of the number fluctuation model as a general 1 noise cause without a need for specific and nonrealistic carrier lifetime probability functions.

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Theory of low frequency noise in Si MOST's

Cited by 72 publications

References 18 publications

Signal-to-Noise Enhancement of a Nanospring Redox-Based Sensor by Lock-in Amplification

Signal-to-Noise Enhancement of a Nanospring Redox-Based Sensor by Lock-in Amplification

A Study Of Flicker Noise In MOS Transistor Under Switched Bias Condition

A nonfundamental theory of low-frequency noise in semiconductor devices

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