Theory for power output and efficiency of silicon TRAPATT oscillators

Theoretical Analysis and Computer Simulation of Double Sided n+-n-p-p+ Trapatt Diode Structures

“…+ In the present paper we are concerned with calculations for double-sided n+-n-p-p diodes, in which TRAPATT mode operation takes place in both the n and p-type drift regions. Analytic TRAPATT theories [3][4][5][6] have to date only been applied to single sided structures. We have extended the analytic theory to include double TRAPATT structures, and numerical results are presented for the frequency upper bound and optimum operating frequency for various structures.…”

“…Both parts of the double-sided structure are taken to be punched through and to be capable of TRAPATT operation. We have extended the analytic theory of Cottam [5,6] for single-sided structures to apply to double-sided devices with arbitrary values of the structure factor x. Realistic velocity/field profiles appropriate to silicon at 3000K are assumed with low field mobilities of 1220 and 460 cm2/V/s for electrons and holes respectively and a common saturation velocity of 1 x 107 cm/s.…”