3rd European Microwave Conference, 1973 1973
DOI: 10.1109/euma.1973.331601
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Theoretical Analysis and Computer Simulation of Double Sided n+-n-p-p+ Trapatt Diode Structures

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1979
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“…In order to model the diodes used for the experiments, a symmetrical ptpnntstructure with equal doping densities NA = ND = N is assumed. As shown previously [2] , the internal dynamics of such a diode can be described by the avalanche-shockfront-theory [3,4] . Thereby two travelling avalanche Lehrstuhl f. technische Elektronik, Techhische Universiitat MUnchen, Arcisstr.…”
Section: Analytical Trapatt Modelmentioning
confidence: 99%
“…In order to model the diodes used for the experiments, a symmetrical ptpnntstructure with equal doping densities NA = ND = N is assumed. As shown previously [2] , the internal dynamics of such a diode can be described by the avalanche-shockfront-theory [3,4] . Thereby two travelling avalanche Lehrstuhl f. technische Elektronik, Techhische Universiitat MUnchen, Arcisstr.…”
Section: Analytical Trapatt Modelmentioning
confidence: 99%