Theoretical study on electron transport properties of graphene sheets with two- and one-dimensional periodic nanoholes

Jippo, Hideyuki; Ohfuchi, Mari; Kaneta, Chioko

doi:10.1103/physrevb.84.075467

Cited by 49 publications

(65 citation statements)

References 32 publications

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“…1(b)]. 6,[8][9][10] With rising temperature [ Fig. 1(a)], the conductivity at the CNP increases exponentially according to…”

Section: A Sample Preparationmentioning

confidence: 99%

“…1,2 One possibility to overcome this hurdle is the use of graphene nanoribbons (GNRs), 3,4 or graphene antidot lattices (GALs). [5][6][7][8][9] The latter represent an interconnected array of GNRs within a graphene sheet and correspondingly allow for enhanced driving currents. Like their counterparts defined within semiconductor heterostructures, GALs are expected to exhibit a wide range of intricate transport properties, especially in magnetic fields where the competing length scales lead to rich physics.…”

Section: Introductionmentioning

confidence: 99%

“…Like their counterparts defined within semiconductor heterostructures, GALs are expected to exhibit a wide range of intricate transport properties, especially in magnetic fields where the competing length scales lead to rich physics. According to numerous theoretical studies, [5][6][7][8][9] GALs offer the principal possibility of tuning the size of the gap via the antidot lattice parameters, specifically the diameter, shape, and separation of the nanoholes. In particular, it has been predicted that the size of the band gap in GALs scales inversely with the neck width.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, it has been predicted that the size of the band gap in GALs scales inversely with the neck width. 9 While experimental studies have provided hints for band gap opening in GALs with neck widths of the order of 20 nm, 10 only little is known about the influence of the geometry of the nanohole array on the charge transport behavior of GALs. Furthermore, the nature of the band gap, i.e.…”

Section: Introductionmentioning

confidence: 99%

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Charge transport gap in graphene antidot lattices

et al. 2012

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Graphene antidot lattices (GALs) offer an attractive approach to band-gap engineering in graphene. Theoretical studies indicate that the size of the opened gap is sensitive to the shape, size, and architecture of the nanoholes introduced into the graphene sheet. We have investigated the temperature-dependent electrical conductivity of GALs comprising 50-nm-diameter nanoholes with a pitch of 80, 100, and 200 nm, respectively. The data reveal the presence of localized states within a transport gap, whose interactions lead to a soft Coulomb gap and associated Efros-Shklovskii variable range hopping (ES-VRH). This conduction type is preserved upon application of magnetic fields up to 1 Tesla, above which a transition to Mott variable range hopping occurs. Such a crossover can alternatively be introduced at zero magnetic fields by increasing either the nanohole spacing or the gate-controlled carrier concentration. Furthermore, at intermediate magnetic fields, the hopping exponent assumes a value of 2/3, as predicted by percolation theory for ES-VRH under this condition.

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“…1(b)]. 6,[8][9][10] With rising temperature [ Fig. 1(a)], the conductivity at the CNP increases exponentially according to…”

Section: A Sample Preparationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Charge transport gap in graphene antidot lattices

et al. 2012

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“…In Ref. [22], Jippo et al studied the limiting cases, where the number of antidots in the transport direction is either one or infinite. They conclude that a transport gap can be observed for a single line of perforations under certain conditions.…”

Section: Introductionmentioning

confidence: 99%

Transport in graphene antidot barriers and tunneling devices

Pedersen

2012

Journal of Applied Physics

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Periodic arrays of antidots, i.e. nanoscale perforations, in graphene enable tight confinement of carriers and efficient transport barriers. Such barriers evade the Klein tunneling mechanism by being of the mass rather than electrostatic type. While all graphene antidot lattices (GALs) may support directional barriers, we show, however, that a full transport gap exists only for certain orientations of the GAL. Moreover, we assess the applicability of gapped graphene and the Dirac continuum approach as simplified models of various antidot structures showing that, in particular, the former is an excellent approximation for transport in GALs supporting a bulk band gap. Finally, the transport properties of a GAL based resonant tunneling diode is analyzed indicating that such advanced graphene based devices may, indeed, be realized using GAL structures.

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Band‐Gap Engineering of Graphene Heterostructures by Substitutional Doping with B₃N₃

et al. 2017

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We investigated the energetics and electronic structure of B N -doped graphene employing density functional theory calculations with the generalized gradient approximation. Our calculations reveal that all of the B N -doped graphene structures are semiconducting, irrespective of the periodicity of the B N embedded into the graphene network. This is in contrast to graphene nanomeshes, which are either semiconductors or metals depending on the mesh arrangement. In B N -doped graphene, the effective masses for both electrons and holes are small. The band gap in the B N -doped graphene networks and the total energy of the B N -doped graphene are inversely proportional to the B N spacing. Furthermore, both properties depend on whether or not the graphene region possesses a Clar structure. In particular, the sheets with a Clar structure exhibit a wider band gap and a slightly lower total energy than those without a Clar structure.

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Theoretical study on electron transport properties of graphene sheets with two- and one-dimensional periodic nanoholes

Cited by 49 publications

References 32 publications

Charge transport gap in graphene antidot lattices

Charge transport gap in graphene antidot lattices

Transport in graphene antidot barriers and tunneling devices

Band‐Gap Engineering of Graphene Heterostructures by Substitutional Doping with B₃N₃

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Theoretical study on electron transport properties of graphene sheets with two- and one-dimensional periodic nanoholes

Cited by 49 publications

References 32 publications

Charge transport gap in graphene antidot lattices

Charge transport gap in graphene antidot lattices

Transport in graphene antidot barriers and tunneling devices

Band‐Gap Engineering of Graphene Heterostructures by Substitutional Doping with B3N3

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Band‐Gap Engineering of Graphene Heterostructures by Substitutional Doping with B₃N₃