Theoretical study of polarization-doped GaN-based light-emitting diodes

By modulating the indium composition in the quantum barriers of InGaN-based LEDs, the influence of electron distribution, electron overflow and Auger recombination on the external quantum efficiency (EQE) and droop effect have been investigated. Experimental results as well as numerical simulations reveal that the electron distribution is the key factor to influence both the peak efficiency and droop effect. The results show that the high electron concentration in the individual quantum well can stimulate the Auger recombination and lead to the droop effect instead of the total effective electron concentration, which is more related to the external quantum efficiency. If we modulate the indium composition in the quantum barriers of the InGaN-based LEDs, a uniform electron distribution can be achieved, which can not only enhance the EQE but also avoid the Auger recombination and improve the droop effect.

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“…Finally, 100 nm thick Mg-doped p-GaN layers were deposited. Details of the growth condition can be found in the previous articles [19][20][21].…”

Section: Methodsmentioning

confidence: 99%

Influence of electron distribution on efficiency droop for GaN-based light emitting diodes

Zhao

Zhang

et al. 2015

J Sol State Light

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“…The simulation has also taken the Coulomb interaction into consideration with the typical dielectric constants of IIInitrides. 11 The simulation parameters including the Auger recombination coefficients, the Shockley−Read−Hall recombination coefficient, the energy band offset ratio for the MQWs, and the polarization level for devices along the c-orientation can be found in our previous publication. 12 …”

Section: ■ Experimental Methodsmentioning

confidence: 99%

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

Liu

Zhang

et al. 2014

ACS Photonics

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InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal− organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer, not only leads to an improved hole injection but also reduces the electron leakage, thus enhancing the radiative recombination rates across the active region. Consequently, the light output power was enhanced by 10% for the QWEBL LED at a current density of 35 A/cm 2 . The efficiency droop of the optimized device was reduced to 16%. This is much smaller than that of the conventional p-AlGaN electron blocking layer LED, which is 31%.

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“…Optical performances and band diagrams of the polarization-doped and the conventional LEDs. 52 Reproduced from Ref. [52], with the permission of AIP Publishing.…”

Section: (3) Co-doping Mg With D-orbital Elementsmentioning

confidence: 99%

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

Li¹,

Liu²,

Yi³

et al. 2017

III-Nitride Materials, Devices and Nano-Structures

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Even though III-Nitrides have demonstrated their ample application in solid-state light, display, laser, detector and high-power RF/switching device, many other new breakthroughs on fundamental physics and fabrication techniques are still highly desired to lead to their next expansion of the research and application field in the near future. In this chapter, the general properties of III-nitrides as well as their ternary and quaternary were briefly reviewed. Specifically, we mainly focused on the underlying physics of p doping challenge, nitrides nano-structures and their application on LEDs. We presented an overview of some main results and progress in highly effective p doping for nitrides. Some promising strategies to address the issue of p doping challenge were also introduced. Furthermore, we describe the prevailing GaN nanowire fabrication methods including wet etching and selective area growth and their application in novel LED structures.

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Theoretical study of polarization-doped GaN-based light-emitting diodes

Cited by 58 publications

References 15 publications

Influence of electron distribution on efficiency droop for GaN-based light emitting diodes

Influence of electron distribution on efficiency droop for GaN-based light emitting diodes

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

Comprehensive Theoretical and Experimental Studies on Iii-Nitrides, Doping, Nano-Structures and Leds

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