Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN

Stanley, I.; Coleiny, Golshan; Venkat, Rama

doi:10.1016/s0022-0248(02)02406-5

Cited by 20 publications

(9 citation statements)

References 7 publications

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“…This deficiency of active N suggests the presence of a physisorbed In/In-methyl surface layer. This is clear by the saturation in In-methyl desorption above 560 1C, consistent with InGaAs [21,22] and InGaN MBE studies [22]. The ability of the In/In-methyl surface layer to block NH 3 adsorption sites and terminate In x Ga 1Àx N growth [23] is apparent in cases of low NH 3 flow and low Ga/In.…”

Section: Discussionsupporting

confidence: 72%

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

Pritchett¹,

Henderson²,

Billingsley³

et al. 2008

Journal of Crystal Growth

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Section: Discussionsupporting

confidence: 72%

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

Pritchett¹,

Henderson²,

Billingsley³

et al. 2008

Journal of Crystal Growth

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“…The Mg valve position was then adjusted to obtain differing levels of Mg doping. The effect of MME growths on InGaN were found to be detrimental due to the high desorption rate [23,24], and low residency of In. Figure 1 SIMS data for Mg-doped GaN step profiles for an unmodulated, droplet-free growth (Mg1), and a smart-shuttering MME growth (Mg2) with similar growth conditions.…”

Section: Methodsmentioning

confidence: 99%

Closed‐loop MBE growth of droplet‐free GaN with very metal rich conditions using Metal Modulated Epitaxy with Mg and In

Burnham

Henderson

Doolittle

2008

Phys. Status Solidi (c)

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Improvements to the Metal Modulated Epitaxy (MME) technique are achieved through computer controlled shutter transitions based on feedback from RHEED transients (S. D. Burnham and W. A. Doolittle, J. Vac. Sci. Technol. B 24, 2100 (2006) [1]), thus creating a closed‐loop control system for nitride MBE, the first of its kind. A high‐sensitivity 22 bit camera is used to determine when RHEED transients have subsided, upon which a shutter transition is initiated allowing the efficient buildup and depletion of the metal bilayer, which improves surface morphology and growth rate compared to the standard MME technique. RMS surface roughness was reduced by 41% by using this “Smart Shuttering” improvement to MME. A substantially higher peak concentration of Mg, approaching 2% atomic concentration, was achieved using the MME technique. As expected, a negligible amount of In was incorporated into the very Ga‐rich films. Using the new closed loop control system developed for MBE, the surface morphology was improved for GaN films while highly repeatable holes concentrations as high as 4.7×1018 cm–3 with 1.07 cm2/V‐sec mobility was obtained. This approach offers great promise for improved reproducibility and improved material quality. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The indium surface segregation can be observed using the transition electron microscopy (TEM) [5], [6], reflection high energy electron diffraction (RHEED) [7] and X-rays diffraction (XRD) [8]. However, all these methods have own disadvantages in case of ultrathin QWs.…”

Section: Light-emitting Diodes and Semiconductor Lasers Based Onmentioning

confidence: 99%

Differential electroabsorption spectra of InGaN/GaN QWs with indium surface segregation

Klymenko

Shulika

Rosales

2011

2011 11th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM)

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In this work, we inYestigate the influence of the in dium surface segregation on the differential absorption obsened for different im' erse biases applied to the structure. Obtained results eyidence that the indium surface segregation leads to more sharp dependence of the absorption on the applied bias for a wide frequency range aboye the red edge. This feature can be used for experimental measurements of the segregation lengths applying optical spectroscopy.

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Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN

Cited by 20 publications

References 7 publications

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

Closed‐loop MBE growth of droplet‐free GaN with very metal rich conditions using Metal Modulated Epitaxy with Mg and In

Differential electroabsorption spectra of InGaN/GaN QWs with indium surface segregation

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