Differential electroabsorption spectra of InGaN/GaN QWs with indium surface segregation

Abstract

In this work, we inYestigate the influence of the in dium surface segregation on the differential absorption obsened for different im' erse biases applied to the structure. Obtained results eyidence that the indium surface segregation leads to more sharp dependence of the absorption on the applied bias for a wide frequency range aboye the red edge. This feature can be used for experimental measurements of the segregation lengths applying optical spectroscopy.