Theoretical Study of Gallium Arsenide Nanotubes Built From Crystal Plane (110)

This work presents a theoretical study of gallium arsenide (GaAs) nanotubes obtained from the (100), (110) and (111) crystal planes of zincblende structure in order to evaluate the electronic properties. The DFT/B3LYP/6-31G method was used to predict structures and stabilities. It was found that nanotubes from the (110) crystal plane tended to be the most stable. The results for average diameter and bond length obtained for optimized nanotube geometries show that nanotubes constructed from the (100) plane have a hyperbolic format, while (110) or (111) nanotubes have a conical format. This difference in relation to geometry introduces regions with different charge concentrations along the tube. From the calculated values for the gap it follows that increasing the number of atoms per layer causes a displacement of the frontier orbitals with a reduction in the gap, yielding characteristics of a semiconductor material.

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Semiconductor Materials for Solar PV Technology and Challenges towards Electrical Engineering

Ramkumar

Rajakumari

Kannan

et al. 2022

Advances in Materials Science and Engineering

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The contemporary concern in worldwide power scenario and consumption rate is frightening significantly at a marvelous amount of population, and it originates a very high augment in the electrical energy area. The all-embracing attraction and manufacture of fossil energy is the chief reason in the ecological issues. Due to these relic fuels, the ecological resources get exhausted, and it results in climatic change. Due to these negative aspects, every country puts effort to bring the energy efficiency high with the help of renewable energy. Presently, the solar energy donation worldwide decreases. Contrarily, solar energy contribution to the global energy is highly contrary to nonconventional energy resources. But there is a progress in power generation, and it plays a vital role in solar photovoltaic generation. Gallium nitride and silicon carbide power semiconductors will emerge to bring the efficiency high in the photovoltaic technology. In this work, we will converse about how to increase the efficiency by using gallium nitride.

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Theoretical Study of Gallium Arsenide Nanotubes Built From Crystal Plane (110)

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High Coverage of H2, CH4, NH3 and H2O on (110) SnO2 Nanotubes

High Coverage of H2, CH4, NH3 and H2O on (110) SnO2 Nanotubes

Stability of rolled-up GaAs nanotubes

Semiconductor Materials for Solar PV Technology and Challenges towards Electrical Engineering

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