Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells

Feng, Shih‐Wei; Lai, Chien‐Chih; Chen, Chien‐Hsun; Sun, Wen-Ching; Tu, Li‐Wei

doi:10.1063/1.3484040

Cited by 57 publications

(30 citation statements)

References 22 publications

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“…[1][2][3][4] These nitride devices are generally grown along the polar c-axis, where the huge built-in electric field decreases the overlap between the electron and hole wave functions and degrades the device performance. 3 The growth of wurtzite III-nitrides along the nonpolar direction can overcome the quantum-confined Stark effect and enhance the radiative efficiency of LEDs.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

Feng

Chen

Lai

et al. 2013

Journal of Applied Physics

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Anisotropic strain relaxation and the resulting degree of polarization of the electronic transition in nonpolar a-plane GaN using one-and two-step growth are studied. By using two-step growth, a slower coalescence and a longer roughening-recovery process lead to larger anisotropic strain relaxation, a less striated surface, and lower densities of basal stacking fault (BSF) and prismatic stacking fault (PSF). It is suggested that anisotropic in-plane strains, surface striation, and BSF and PSF densities in nonpolar a-GaN are consequences of the rate of coalescence, the period of roughening-recovery process, and the degree of anisotropic strain relaxation. In addition, the two-step growth mode can enhance the degree of polarization of the electronic transition. The simulation results of the kÁp perturbation approach show that the oscillator strength and degree of polarization of the electronic transition strongly depend on the in-plane strains upon anisotropic in-plane strain relaxation. The research results provide important information for optimized growth of nonpolar III-nitrides. By using two-step growth and by fabricating the devices on the high-quality nonpolar free-standing GaN substrates, high-efficiency nonpolar a-plane InGaN LEDs can be realized. Nonpolar a-plane InGaN/GaN LEDs can exhibit a strongly polarized light to improve the contrast, glare, eye discomfort and eye strain, and efficiency in display application. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

Feng

Chen

Lai

et al. 2013

Journal of Applied Physics

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“…Where b is the bowing parameter, which account for the non-linear fit of band gap energies, and is equal to 1.43 eV 17 . In InGaN, electrical and optical properties changes with indium composition.…”

Section: Properties Of In X Ga 1-x N Used In Simulationsmentioning

confidence: 99%

Numerical Study of InGaN based Photovoltaic by SCAPs Simulation

et al. 2015

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The necessity to find new forms of renewable energy is very important and urgent nowadays. The renewable sources of energy derived from the sun are one of the promising options. The photovoltaic cells as one of renewable energy sources have been largely studied in order to obtain cheap, efficient and secure PV cells. The conversion efficiency is the most important property in the PV domain. Indium gallium nitride (InGaN) alloys offer great potential for high-efficiency photovoltaics. We present numerical simulations of GaN/InGaN heterojunction solar cells by SCAPs simulation. The calculation of characteristic parameters: short-circuit current density, open-circuit voltage, and conversion efficiency. So, these simulations study the effect of indium content and thickness in these parameters. While the maximum efficiency of a p-n GaN/InGaN heterojunction solar cell with 0.2 indium composition is 2.78%, above an indium composition of 20%, the modeled heterojunction devices do not operate as solar cells.

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“…The In x Ga 1−x N absorption coefficient (Vurgaftman and Meyer 2003), α(E), is a function of energy and band gap (Feng et al 2010) as a function of indium composition can be expressed, respectively:…”

Section: Theory and Simulation Parametersmentioning

confidence: 99%

p-GaN/i-In $$_\mathrm{x }$$ x Ga1 $$_\mathrm{x }$$ x N/n-GaN solar cell with indium compositional grading

et al. 2014

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The effect of indium compositional grading on the performance of p-GaN/i-In xGa 1−x N/GaN solar cell has been investigated using TCAD Silvaco. An enhancement in efficiency of almost two times is found and this may be due to the increase in short circuit current density and open circuit voltage. This can be imputed to high carrier collection due to the reduction of band offset at the interface and high band bending in intrinsic layer. The optimized GaN/In x Ga 1−x N solar cell with indium composition grading from 0 to 0.11, results fill factor of 77 %, short circuit current density of 0.99 mA/cm 2 and open circuit voltage of 2.21 V under AM1.5G illumination.

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Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells

Cited by 57 publications

References 22 publications

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

Numerical Study of InGaN based Photovoltaic by SCAPs Simulation

p-GaN/i-In $$_\mathrm{x }$$ x Ga1 $$_\mathrm{x }$$ x N/n-GaN solar cell with indium compositional grading

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