Theoretical simulations of I-center annealing in KCl crystals

Abstract

This paper focus on theory of diffusion-controlled annealing of the most mobile radiation-induced defects-I centers-in KCI crystals. The kinetics of annealing of pairs of close oppositely charged defects--a-1 centers (arising as a result of the tunnelling recombination of primary Frenkel defects-F and H centers) and F-I centers (when H center trap electrons) is calculated taking into account defect diffusion and CouIomb/elastic interaction. Special attention is paid to the conditions under which multi-stage annealing arises; theoretical results are compared with the relevant experimental data.

Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals

“…These parameters are necessary for the prediction of the kinetics of possible secondary reactions and, in general, material radiation stability. Previous studies performed on KCl and KBr crystals were focused mostly on spatially correlated defect pairs (F-H and α-I) [11,[35][36][37][38], while this paper deals with the recombination kinetics of spatially uncorrelated complementary defect pairs.…”