Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals

Abstract

We analyzed carefully the experimental kinetics of the low-temperature diffusion-controlled F, H center recombination in a series of irradiated alkali halides and extracted the migration energies and pre-exponential parameters for the hole H centers. The migration energy for the complementary electronic F centers in NaCl was obtained from the colloid formation kinetics observed above room temperature. The obtained parameters were compared with data available from the literature.

Эволюция Анионных И Катионных Экситонов В Щелочно-Галоидных Кристаллах (О Б З О Р)

“…Но и такие ДФ неподвижны в ЩГК лишь при гелиевой температуре, первыми при нагреве до ∼ 20−40 K становятся подвижными интерстициалы (обычно сначала I-и затем H-центры) и рекомбинируют с F-центрами, остающимися неподвижными в ЩГК и других широкощелевых материалах до очень высоких температур (см., например, [74,94,107] и цитируемую там литературу). Низкотемпературный отжиг пар ДФ изучен экспериментально с использованием методов оптического поглощения, ЭПР и термостимулированной люминесценции [9,58,77,[99][100][101][102][103][104], теоретическое модели-рованием этих диффузионно-контролируемых процессов осуществлено в [108][109].…”

Low-temperature radiation effects in wide gap materials

“…The ratio between radiative and non-radiative channels of energy dissipation channels depends on many factors and determines the prospects of the material application for certain purposes. As the radiation damage limits many of these applications, the elucidation of the mechanisms of structural defect creation and their possible attenuation/suppression in wide gap materials are of increasing importance.One review article and 13 regular research papers cover a broad class of wide gap materials, starting from model single alkali halide crystals, both pure and doped [1,3,9,11] [13]. The comprehensive review of the relaxation of the electronic excitations and luminescence of rutile-structured SiO 2 and GeO2 crystals and their detailed comparison with α-quartz crystals and relevant glasses was given in paper [6].…”

“…One review article and 13 regular research papers cover a broad class of wide gap materials, starting from model single alkali halide crystals, both pure and doped [1,3,9,11] [13]. The comprehensive review of the relaxation of the electronic excitations and luminescence of rutile-structured SiO 2 and GeO2 crystals and their detailed comparison with α-quartz crystals and relevant glasses was given in paper [6].…”

“…One review article and 13 regular research papers cover a broad class of wide gap materials, starting from model single alkali halide crystals, both pure and doped [1,3,9,11], widely used for different applications pure and doped CaF 2 and BaF 2 alkali-earth halides [1], rutilestructured SiO 2 and GeO 2 crystals and glasses [6] or CdI 2 layered crystals [12] to less studied tungstate NiWO 4 [2,4] and lastly, perovskites BaLiF 3 [1] and BaZrO 3 [13]. The comprehensive review of the relaxation of the electronic excitations and luminescence of rutile-structured SiO 2 and GeO2 crystals and their detailed comparison with α-quartz crystals and relevant glasses was given in paper [6].…”

“…It was experimentally proved for the first time that only the recombination of non-relaxed (hot) electrons with holes provides the energy (exceeds energy gap by 2-3 eV) sufficient for the creation of Frenkel defects at low temperature. The detailed simulations of the kinetics of low-temperature diffusion-controlled F, H center recombination (and its comparison with the experimental literature data) was performed for a series of irradiated alkali halide crystals by Kuzovkov et al [11]. This is the first theoretical study which demonstrates how to extract the energies of defect migration and interaction from experimental kinetics of the defect annealing.…”