2009
DOI: 10.1007/s11431-009-0143-z
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Theoretical progress in non-equilibrium grain-boundary segregation (II): Micro-mechanism of grain boundary anelastic relaxation and its analytical formula

Abstract: Finding the internal-friction peak of grain boundary anelastic relaxation was one of the important breakthroughs in the study of internal friction in the last century. But the micro-mechanism of grain boundary anelastic relaxations is still obscure. Based on the observations of the grain boundary segregation or depletion of solute induced by an applied stress, the following micro-mechanism was suggested: grain-boundaries will work as sources to emit vacancies when a compressive stress is exerted on them and as… Show more

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Cited by 3 publications
(2 citation statements)
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“…This phenomenon will increase the roughness of InGaAs surface. Raising temperature after InGaAs growth as an annealing treatment can evaporate excess indium atoms at InGaAs layer surface and will result a better growth of front flatness [ 17 , 18 ]. So, we adopted the last method to grow simple RTD-3.…”
Section: Resultsmentioning
confidence: 99%
“…This phenomenon will increase the roughness of InGaAs surface. Raising temperature after InGaAs growth as an annealing treatment can evaporate excess indium atoms at InGaAs layer surface and will result a better growth of front flatness [ 17 , 18 ]. So, we adopted the last method to grow simple RTD-3.…”
Section: Resultsmentioning
confidence: 99%
“…In order to verify the equilibrium equation ( 9), the elastic modulus at grain boundaries was calculated using equation ( 9) and the experimental results of Misra. 67,[71][72][73][74] A value of elastic modulus at the grain boundaries, E gb 52?03610 9 Pa, was obtained. Thus, the modulus at grain boundary falls by a factor of 100 to bulk.…”
Section: Stress Induced Non-equilibrium Grain Boundary Segregationmentioning
confidence: 99%