Using a readily available finite element code (Freefem++) the performance of nanowire (NW) field-effect transistors used as bioaffinity sensors has been simulated in 2D using realistic models for the semiconductor, gate insulator, Stern layer, and a layer of charged biomolecules (DNA) in electrolyte. The simulations are compared to those published previously for cylindrical NWs suspended in electrolyte. Calculations for Si NWs with circular and trapezoidal cross-section on SOI substrates are compared to assess the relative sensitivities for the devices made during the top-down (cylindrical) and bottom-up (trapezoidal) approach to device fabrication. It is shown that the performance of the trapezoidal structures could be superior, even when compared to cylinders with smaller dimensions. The simulations are compared to recent pH measurements with trapezoidal nanowires and pave the way to improved simulations for DNA and protein attachment.