2021
DOI: 10.1016/j.mtcomm.2021.102972
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Theoretical modeling and optimization: Cd-free CTS/Zn(O,S)/ZnO thin film solar cell

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Cited by 5 publications
(5 citation statements)
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“…We can refer this low performance to i) the distinctive structure of our devices, which is based on n‐Si as the bottom layer and makes the performance of Al,Ni/AZO/i‐ZnO/CdS/CTS/Mo and Al/n‐Si/CTS/Ag solar cell structures incomparable. ii) The copper‐rich composition of our thin films (Cu/Sn = 2.12–2.36) will increase the carrier concentration and lower the resistivity, [ 96 ] which will have a negative effect on PV characteristics of our solar cells. However, in our paper, we have provided a conclusive investigation on the positive and negative effects of Li doping on CTS thin films and solar cells while a doped PLD target is used.…”
Section: Resultsmentioning
confidence: 99%
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“…We can refer this low performance to i) the distinctive structure of our devices, which is based on n‐Si as the bottom layer and makes the performance of Al,Ni/AZO/i‐ZnO/CdS/CTS/Mo and Al/n‐Si/CTS/Ag solar cell structures incomparable. ii) The copper‐rich composition of our thin films (Cu/Sn = 2.12–2.36) will increase the carrier concentration and lower the resistivity, [ 96 ] which will have a negative effect on PV characteristics of our solar cells. However, in our paper, we have provided a conclusive investigation on the positive and negative effects of Li doping on CTS thin films and solar cells while a doped PLD target is used.…”
Section: Resultsmentioning
confidence: 99%
“…Due to the limited diffusion length of minority carrier's and the presence of defects in the thin film, the recombination rate increases far away from the depletion region and close to the contact that will decrease the carriers' collection and reduce V oc and J sc . [100][101][102] Parameters of this layers CTS [67,96] n-Si [97][98][99] E g , bandgap energy In Figure 12, we pointed out the V oc and J sc values of n-Si/CTS and n-Si/Li 0.03 CTS solar cells. The values are very close to the simulated plot and have the same tendency in decreasing when the thickness of CTS thin films increases, which supports the accuracy of our model.…”
Section: Modeling Study Of the Effect Of Cts Thickness On The Perform...mentioning
confidence: 99%
“…Here, the energy bandgap E g and the electron affinity χ e values of the Zn (O, S) are varied as a function of the composition ratio  using the following relationships: [41]…”
Section: Device Structure and Numerical Simulationmentioning
confidence: 99%
“…Here, the energy bandgap Eg$E_{\text{g}}$ and the electron affinity χe$\left(\chi\right)_{\text{e}}$values of the Zn (O, S) are varied as a function of the composition ratio × using the following relationships: [ 41 ] EgZn(O,S)(x)=xEgZnS+(1x)EgZnOb(1x)x$$E_{\text{gZn} \left(\right. \text{O,S} \left.\right)} \left(\right.…”
Section: Device Structure and Numerical Simulationmentioning
confidence: 99%
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