Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field-effect transistors

Stengel, Franck; Mohammad, S. Noor; Morkoç̌, H.

doi:10.1063/1.363162

Cited by 80 publications

(23 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The 0.49 x 10 7 F/cm 2 drop of C total is therefore not necessarily related to a physical increase of the barrier thickness such as the formation of a surface oxide monolayer. We rather attribute the drop of C total to the decrease of the quantum capacitance as the 2DEG centroid shifts away from the heterointerface, caused by the decrease of n S observed during thermal oxidation [18].…”

Section: Contributedmentioning

confidence: 99%

On the thermal oxidation of AlInN/AlN/GaN heterostructures

Eickelkamp

Weingarten

Khoshroo

et al. 2011

Phys. Status Solidi C

View full text Add to dashboard Cite

In this work, we report on the thermal oxidation of AlInN/AlN/GaN heterostructures. A ‘nearly‐native’ Al2O3 oxide was formed during this procedure, which can be used as a gate oxide and thus enables the fabrication of MIS‐HFET. 2DEG density and, in particular, carrier mobility are strongly affected by the thermal treatment in O2 atmosphere. Hence, only a narrow processing window for successful thermal oxidation was identified, covering annealing temperatures between 700 °C and 800 °C and annealing durations of few minutes. Oxide thicknesses estimated to be in the range of 0.6 nm and 2.6 nm were fabricated, enabling a suppression of reverse leakage currents of MIS large‐area gate diodes by up to three orders of magnitude. The resulting oxide thickness scales well with the square root of oxidation time, indicating a diffusion of oxygen atoms into the barrier. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Contributedmentioning

confidence: 99%

On the thermal oxidation of AlInN/AlN/GaN heterostructures

Eickelkamp

Weingarten

Khoshroo

et al. 2011

Phys. Status Solidi C

View full text Add to dashboard Cite

show abstract

“…V BE and V CB affect the TT * (E Z ), which is derived from the one-dimensional Schro È dinger equation. In the calculation, the effective electron mass in GaN and AlN is assumed to be 0.2 and 0.4, respectively [8], and the conduction band discontinuity at the GaN/AlN heterointerface is also set at 2 eV [9]. The Fermi energy in the n-type GaN emitter region is also assumed to be 0.1 eV above the bottom of the conduction band.…”

Section: Analysis Of Device Characteristicsmentioning

confidence: 99%

GaN-Based Quantum-Effect Electron Devices Using Quantum Interference of Hot Electron Waves

Shirakashi¹,

Shimizu²,

Okumura³

1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

“…1, closely resembles the qualitative behavior of the self-consistent solution for the quantum well potential in the heterostructure (see, for instance, Refs. [4][5][6]) in the region near the interface. However, its asymptotic approach to zero for large z deviates from the SC result, which shows a monotonic quasi-linear increasing of the potential profile when z goes away from the interface, indicating the penetration of the screened electric field in the active zone of the structure.…”

mentioning

confidence: 99%

A Variational Approach for the Calculation of Single Electron States in Semiconductor Heterostructures

Toledo-Solano

2002

phys. stat. sol. (b)

View full text Add to dashboard Cite

A different variational scheme for the calculation of conduction band energy levels is proposed for the study of single electron states in the quasi-two-dimensional gas of semiconducting heterostructures. The method uses a trial potential energy function which essentially results from the local density Thomas-Fermi theory of a two-dimensional gas of interacting electrons. The model potential is then written as a combination of this Hartree contribution plus a typical triangular quantum well. The calculation of the lower electronic states in a AlN/GaN single heterostructure is presented as an application.The Thomas-Fermi (TF) approximation for the study of monoelectronic states in nitride-based single heterostructures (SHS) was recently put forward [1,2]. This approach takes advantage of the formation of large polarization-induced sheet density charges adjacent to the system's interface [3]. From the qualitative point of view the obtained potential profile closely agrees with the one arising from a self-consistent (SC) Schrö -dinger-Poisson solution, and numerical results for the calculated sheet density in the two-dimensional electron gas (2DEG) of SHS-based nitride field effect transistors are in very good agreement with experiments as well [4]. In this work we present an alternative way of calculating single electron states in semiconducting SHS. In order to illustrate the general features of the method let us first assume the simplest system of the AlN/GaN prototype, where the conduction band potential barrier is high enough to be considered as infinite. Thus, single electron states in the AlN region (z < 0) are taken identically zero. In the region with z > 0 (GaN), the model potential proposed for the quantum well is given byHere, atomic units (a.u.) are considered troughout. That is, the lengths are measured in units of the effective Bohr radius a * B ¼ h 2 E r =m * e 2 , and the energies are given in units of the effective Rydberg Ry * ¼ e 2 =2a * B E r . The second term in the above equation corresponds to a Hartree contribution coming from the previously mentioned Thomas-Fermi model (the Fermi level is taken as the origin of the energies). The parameters V and g depend on the two-dimensional induced sheet density charge s through phys. stat. sol. (b) 232,

show abstract

Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field-effect transistors

Cited by 80 publications

References 18 publications

On the thermal oxidation of AlInN/AlN/GaN heterostructures

On the thermal oxidation of AlInN/AlN/GaN heterostructures

GaN-Based Quantum-Effect Electron Devices Using Quantum Interference of Hot Electron Waves

A Variational Approach for the Calculation of Single Electron States in Semiconductor Heterostructures

Contact Info

Product

Resources

About