Theoretical Band Structure Analysis on Possible High-Z Detector Materials

Yee, Jick H.; Sherohman, J.W.; Armantrout, G.A.

doi:10.1109/tns.1976.4328225

Cited by 38 publications

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References 14 publications

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“…Band calculations suggest that =-HgI 2 is an indirect-gap semiconductor [29], whereas the experiment shows strong excitonic CL. It is an n-type semiinsulating semiconductor [16,30].…”

Section: Scanning Electron Microscopymentioning

confidence: 89%

Extended structural defects in ?-Hgl2 single crystals

Nicolau

Dupuy

Rolland

1993

J Mater Sci: Mater Electron

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Extended structural defects in both ~-Hgl 2 crystals grown in solution or from the vapourphase were studied by optical microscopy, light scattering, SEM operated in cathodoluminescence and in secondary electron mode, X-ray topography, neutron, y-and X-ray rocking curves and oscillating crystal X-ray diffraction. The observed dislocations were compared with theoretically calculated dislocations. Dislocation loops, having diameters ranging from 2 gm to 500 gm, are observed on all low index faces, Hohlstellen (lens-shaped voids) having axes along the [001] direction, less than 1 gm in thickness, and diameters lying in the (001) planes, ranging from 2 gm to 10 gm are characteristic defects. Observed plastic deformations like glide sheets and bands, tilt and twist boundaries, kink and fatigue bands, ridges and rumplings were characterized. Growth rings, spherical void inclusions 10-30 gm in diameter, orthogonal walls of forest screw dislocations parallel to {1 00} planes, and streaks (planar void sheets crossing the (001 ) planes) were only observed in crystals grown from the vapour-phase. Cross-penetration twins having {1 1 4} twin planes are described. The possible formation of stacking faults was analysed. The mosaicity of solution-grown crystals ranges from 1' to 6'. A characteristic cellular structure, having a cell size ranging from 2 I~m to 10 gm, was observed in all the crystals examined and correlated to local deviations from the stoichiometric composition. Solid lens-shaped inclusions, having diameters ranging from 3 gm to 500 gm and thicknesses ranging from 0.3 gm to 50 gm, respectively, are entrapped in many crystals and correlated to spiral hillocks observed on {0 01 } growing faces.

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“…Band calculations suggest that =-HgI 2 is an indirect-gap semiconductor [29], whereas the experiment shows strong excitonic CL. It is an n-type semiinsulating semiconductor [16,30].…”

Section: Scanning Electron Microscopymentioning

confidence: 89%

Extended structural defects in ?-Hgl2 single crystals

Nicolau

Dupuy

Rolland

1993

J Mater Sci: Mater Electron

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Diffuse reflectance spectra and polymorphism of mercury (II) iodide

Paić

1981

Phys. Stat. Sol. (a)

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Relative diffuse reflectance spectra of microcrystalline HgI2 powder are made between 15000 and 27000 cm−l, at temperatures from ≈ 5 to 530 K. They are transformed into Kubelka‐Munk function spectra. α‐HgI2 shows exciton absorption and emission spectra as well as a strong lu‐ minescence band at 17860 cm−l at ≈ 5 K which shifts to 18700 cm−l at 80 K. Three new low temperature phases are observed when β‐HgI2, is quenched from temperatures above 400 K to 80 or 4.2 K.

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Characterization of Deep Energy Levels in Mercuric Iodide

Mohammed-Brahim¹,

Friant²,

Mellet³

1983

Phys. Stat. Sol. (a)

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The past few years have seen an increasing interest in HgI, detectors for room temperature yand X-ray spectrometry. Performance and effective thickness of these detectors are presently limited by carrier trapping which results in incomplete charge collection. Characterization of the trapping levels is performed by several photoelectronic methods (photoconductivity, thermal and optical quenching of the photoconductivity, TSC, lifetime measurement). A model is proposed taking into account the results obtained by these techniques in both, vapor phase and solution grown crystals.Depuis quelques annhes, les dhtecteurs HgI, prhsentent un inthrht croissant pour la spectrometric des photons y et X B la temphrature ordinaire. Les performances et l'hpaisseu utile de ces dhtecteurs sont actuellement limithes par des phhnomhnes de pibgeage qui affectent Ia collecte des charges crhhes par les photons. La caracthrisation des niveaux localishs dans la bande interdite, responsable de ce pihgeage, a 6th menhe par diffhrentes mhthodes photoelectroniques (photoconductivith, quenching thermique et optique de la photoconductivitb, TSC, mesure de durhe de vie).Un modhle est propos6 prenant en compte les r&sultats obtenus par ces m6thodes sup des cristaux rhalishs soit it partir de la phase vapeur, soit en solution.

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Theoretical Band Structure Analysis on Possible High-Z Detector Materials

Cited by 38 publications

References 14 publications

Extended structural defects in ?-Hgl2 single crystals

Extended structural defects in ?-Hgl2 single crystals

Diffuse reflectance spectra and polymorphism of mercury (II) iodide

Characterization of Deep Energy Levels in Mercuric Iodide

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