The past few years have seen an increasing interest in HgI, detectors for room temperature yand X-ray spectrometry. Performance and effective thickness of these detectors are presently limited by carrier trapping which results in incomplete charge collection. Characterization of the trapping levels is performed by several photoelectronic methods (photoconductivity, thermal and optical quenching of the photoconductivity, TSC, lifetime measurement). A model is proposed taking into account the results obtained by these techniques in both, vapor phase and solution grown crystals.Depuis quelques annhes, les dhtecteurs HgI, prhsentent un inthrht croissant pour la spectrometric des photons y et X B la temphrature ordinaire. Les performances et l'hpaisseu utile de ces dhtecteurs sont actuellement limithes par des phhnomhnes de pibgeage qui affectent Ia collecte des charges crhhes par les photons. La caracthrisation des niveaux localishs dans la bande interdite, responsable de ce pihgeage, a 6th menhe par diffhrentes mhthodes photoelectroniques (photoconductivith, quenching thermique et optique de la photoconductivitb, TSC, mesure de durhe de vie).Un modhle est propos6 prenant en compte les r&sultats obtenus par ces m6thodes sup des cristaux rhalishs soit it partir de la phase vapeur, soit en solution.
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