Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Li, Xue Qing; Tone, K.; Cao, Li Hui; Alexandrov, Peter; Fursin, L.; Zhao, J.H.

doi:10.4028/www.scientific.net/msf.338-342.1375

Cited by 34 publications

(20 citation statements)

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“…1 yields a maximum blocking voltage of 1723 V assuming 100% edge termination, i.e., no field crowding at all at the edge of the device. This suggests that we have achieved an excellent edge termination by using the multistep JTE (MJTE) approach [7].…”

Section: Resultsmentioning

confidence: 98%

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1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors

Zhao

Tone

Alexandrov

et al. 2003

IEEE Electron Device Lett.

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This letter reports the demonstration of a 4H-SiC trenched and implanted vertical-junction field-effect transistor (TI-VJFET). The p + n junction gates are created on the sidewalls of deep trenches by angled Al implantation, which eliminates the need for epitaxial regrowth during the JFET fabrication [1], [2]. Blocking voltages up to 1710 V has been achieved with a voltage supporting drift layer of only 9.5 m by using a two-step junction termination extension. The TI-VJFET shows a low specific on-resistance ON sp of 2.77 mcm 2 , corresponding to a record high value of ON sp equal to 1056 MW cm 2 . Index Terms-4H-SiC, high current density, high voltage, power junction field-effect transistor (JFET).

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Section: Resultsmentioning

confidence: 98%

“…Post-implantation annealing of all Al implant is done at 1550 C for 30 min. Two-step JTE with a step width of 15 m[7] is formed by ICP etching, followed by surface passivation using a 50-nm-thick thermal oxide plus a 200-nm-thick plasma-enhanced chemical vapor deposited (PECVDDetailed vertical p gate implantation profile.…”

mentioning

confidence: 99%

1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors

Zhao

Tone

Alexandrov

et al. 2003

IEEE Electron Device Lett.

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“…Experimental work in [15], [12], and [19] reported 4H-SiC pn diodes with reverse current characteristics. Hence, we fit leakage current curves from [15], [12] through simulation by adjusting the Al parameter. The value of reverse current is rather small, which make it hard to measure the value precisely.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…A collection of data of reported 4H-SiC pn junction diodes [9][10][11][12][13] of typical design are studied. The breakdown voltage reductions of these diodes are 3000 or lower compared to theoretical prediction.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

Wei

Liang

Samudra

2007

2007 International Conference on Power Engineering, Energy and Electrical Drives

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This paper presents a methodology to simulate the reverse characteristics of realistic 4H-SiC pn junctions. The physical bases behind methodology of the simulation have been analyzed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation.Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not needed in the calibration step.

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“…This device was designed and fabricated by CREE Inc. to provide 1200 V forward blocking voltage and a maximum controllable current density of 500 A/cm 2 (or 7 A based on an active area of 37% of the total mesa area). As these devices are asymmetric, their reverse blocking voltage is limited to 250 V. junction, J 2 , thereby increasing the forward blocking voltage (13). Note that the control signal for this structure is applied between the gate and anode-unlike many conventional silicon GTOs.…”

Section: Sic Gate Turn-off Thyristor and Sic P-i-n Diodementioning

confidence: 99%

High-Temperature, 400 W, DC-to-AC Inverter Using Silicon Carbide Gate Turn- Off Thyristors and p-i-n Diodes

Tipton¹,

Bayne²,

Scozzie³

et al. 2003

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Sensors and Electron Devices Directorate, ARLApproved for public release; distribution unlimited. ii REPORT DOCUMENTATION PAGEForm Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)October 2003 ARL-TR-3111 SPONSOR/MONITOR'S ACRONYM(S) 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)U.S. Army Research Laboratory 2800 Powder Mill Road Adelphi, MD 20783-1197 SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTA high-temperature, 400 W, DC-to-AC inverter has been developed using silicon carbide gate turn-off thyristors and p-i-n diodes. We demonstrate the inverter driving a three-phase, inductive motor up to 580 W and device case temperatures up to 150° C. The inverter circuit was constructed to perform the first characterization of these SiC devices under significant electrical and thermal stresses, investigate the parametric operating space of the SiC devices, and uncover circuit-related failure modes. We discuss our electrical screening criteria of the SiC components, electrical stresses brought about by circuit topology, component failure modes, and inverter performance. We will use the results of this work in the development of future SiC components. SUBJECT TERMS

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Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Cited by 34 publications

References 0 publications

1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors

1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors

Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

High-Temperature, 400 W, DC-to-AC Inverter Using Silicon Carbide Gate Turn- Off Thyristors and p-i-n Diodes

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Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Cited by 34 publications

References 0 publications

1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors

1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors

Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

High-Temperature, 400 W, DC-to-AC Inverter Using Silicon Carbide Gate Turn- Off Thyristors and p-i-n Diodes

Contact Info

Product

Resources

About

1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors

1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors