Theoretical and Experimental Studies of Bending of Inorganic Electronic Materials on Plastic Substrates

Park, Sang-Il; Ahn, Jong Hyun; Feng, Xue; Wang, Shuodao; Huang, Yonggang; Li, Jinghua

doi:10.1002/adfm.200800306

Cited by 421 publications

(303 citation statements)

References 26 publications

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“…This instability is suggest to be fixed by defects, such as ripples or grain boundaries, which do not allow these waves by limiting the size [41][42][43]. Furthermore, we found tensile strain can suppress such instability near Γ, which can be easily applied to monolayer materials [44,45]. As an example, in Fig.…”

Section: Resultsmentioning

confidence: 90%

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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The transition metal dichalcogenide (TMD) 1T -TaS2 exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in 1T -TaS2. We investigate the charge doping effects on the electronic structures and phonon instabilities of 1T structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer 1T -TaS2, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with Tc of 6 ∼ 7 K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in 1T -TaS2, which makes the novel material have very promising applications in the future electronic devices.

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Section: Resultsmentioning

confidence: 90%

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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“…1(d), the local deformation in the bent Si membrane is considered to increase linearly with the distance from the central neutral mechanical plane, which itself remains unstrained (tensile strain towards the outside and compressive towards the inside). 32,33 Hence, the distinct fracture radii for the samples prepared on 50 and 100 lm thick Si membranes are attributed to the different strain levels at the surfaces of the substrates at a given bending radius-(only half the value for the thinner samples. As the thickness of the support increases, the fracture strain at the outer surface is reached already at a larger bending radius.…”

mentioning

confidence: 99%

High-performance giant magnetoresistive sensorics on flexible Si membranes

Pérez

Melzer

Makarov

et al. 2015

Applied Physics Letters

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We fabricate high-performance giant magnetoresistive (GMR) sensorics on Si wafers, which are subsequently thinned down to 100 mu m or 50 mu m to realize mechanically flexible sensing elements. The performance of the GMR sensors upon bending is determined by the thickness of the Si membrane. Thus, bending radii down to 15.5mm and 6.8mm are achieved for the devices on 100 mu m and 50 mu m Si supports, respectively. The GMR magnitude remains unchanged at the level of (15.3 +/- 0.4)% independent of the support thickness and bending radius. However, a progressive broadening of the GMR curve is observed associated with the magnetostriction of the containing Ni81Fe19 alloy, which is induced by the tensile bending strain generated on the surface of the Si membrane. An effective magnetostriction value of lambda(s) = 1.7 x 10(-6) is estimated for the GMR stack. Cyclic bending experiments showed excellent reproducibility of the GMR curves during 100 bending cycles

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“…Tandem OLEDs with 4LG anodes maintained nearly the same current density for a bending strain of up to~6.7% that corresponds to a 1.5 mm bending radius of curvature ( Figure 5b); a rollable display, which represents the ultimate form of flexible displays, requires a 5-10 mm bending radius of curvature, which is easily achievable in our flexible OLEDs. 49 This result demonstrates the excellent mechanical flexibility of tandem OLEDs with the 4LG anode relative to the external bending stress. In addition, we used the thin PET substrate (thickness:~50 μm) to observe the excellent flexibility of tandem OLEDs with the 4LG anode.…”

Section: Flexible Tandem Organic Light-emitting Diodesmentioning

confidence: 54%

Approaching ultimate flexible organic light-emitting diodes using a graphene anode

et al. 2016

Self Cite

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Ultimate flexible organic light-emitting diodes (OLEDs) should have an ultra-high device efficiency, a low-efficiency roll-off at a high luminance and excellent flexibility. Here, we realized flexible tandem OLEDs using a graphene anode with a very high electroluminescent efficiency of~205.9 cd A − 1 , 45.2% (~396.4 cd A − 1 , 87.3% with a hemispherical lens) and a very low efficiency roll-off at a high luminance of~6.6% at 10 000 cd m − 2 (~3.8% with a hemispherical lens) by stacking two organic electroluminescence (EL) units. For the first time, we used an easily controlled and low-temperature processable charge generation layer with lithium nitride (Li 3 N). This simultaneously provided efficient stacking of EL units and enhanced compatibility of the flexible device on a thin plastic substrate. The flexible tandem OLEDs with a graphene anode also showed great flexibility against bending up to a bending strain of 6.7%. These results represent a significant advancement towards the production of next-generation flexible displays and solid-state lighting that use a graphene anode.

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Theoretical and Experimental Studies of Bending of Inorganic Electronic Materials on Plastic Substrates

Cited by 421 publications

References 26 publications

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

High-performance giant magnetoresistive sensorics on flexible Si membranes

Approaching ultimate flexible organic light-emitting diodes using a graphene anode

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