Theoretical and Experimental Investigation of the Incident-Power-Dependent Extinction Ratio of an Electroabsorption Modulator Integrated With a Distributed Feedback Laser

Fujisawa, Takeshi; Yamanaka, T.; Tadokoro, Takashi; Fujiwara, Naoki; Arai, M.; Kobayashi, Wataru; Kawaguchi, Yoshihiro; Tsuzuki, Ken; Kano, F.

doi:10.1109/jqe.2010.2073448

Cited by 5 publications

(4 citation statements)

References 17 publications

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“…3 shows the static extinction ratio (SER) characteristics of our transmitter for various laser current at 25°C. Large SER from 13 to 16.5 dB are achieved at a low bias voltage below 2.5 V. The increase of the extinction ratio for high laser drive current is probably due to self-heating of the modulator 7 . The frequency response was measured using a vector network analyzer with a calibrated photodiode for various laser currents as represented in Fig.…”

Section: Transmitter Designmentioning

confidence: 93%

Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission

Caillaud

Adrover²,

Blache

et al. 2015

2015 European Conference on Optical Communication (ECOC)

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Section: Transmitter Designmentioning

confidence: 93%

Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission

Caillaud

Adrover²,

Blache

et al. 2015

2015 European Conference on Optical Communication (ECOC)

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“…ћω kt ' = εg,0+εe,kt+εh,kt. The correlation term (A11) can be divided into diagonal and nondiagonal components for given k t as (A12, 13,15,16).…”

Section: Appendix Brief Description Of Mbt and Numericalmentioning

confidence: 99%

“…In this paper, the material gain of GeSn/SiGeSn QWs is investigated for mid-IR Si-photonics light sources by using microscopic many-body theory (MBT) [10][11][12][13][14][15]. MBT does not need any fitting parameters used in FCT to obtain optical properties of QWs and only needs basic bulk band parameters.…”

Section: Introductionmentioning

confidence: 99%

Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

Fujisawa

Saitoh

2015

IEEE J. Quantum Electron.

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Abstract-Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate by using a buffer layer, is analyzed based on microscopic many-body theory (MBT) for mid-infrared light sources based on Si photonics. MBT can take into account a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any artificial fitting parameters, such as a relaxation time, used in conventional analysis. Not only Γ-but also carrier distributions in L-points are considered for the gain analysis. By using MBT, the quantum well structures maximizing the material gain and the differential gain at the threshold are investigated in terms of the well thickness, the strain, and the energy difference of quantum states between Γ-and L-points.Index Terms -Mid-infrared photonics, Si photonics, GeSn quantum wells, and many-body theory.

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“…To take into account this correction, we use Si 0.95 Ge 0.05 buffer [19] in our simulation. Figure 2 (a) shows the absorption spectra of Ge/SiGe QWs obtained by MBT for the carrier density from 3 to 9×10 16 cm -3 (low carrier density region). For low carrier density, the exciton absorption peak is very sharp and it is rapidly collapsed for large carrier density due to Coulomb screening effect.…”

Section: Qcse Of Ge/sige Quantum Wellsmentioning

confidence: 99%

Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

Fujisawa

Saitoh

2015

IEEE J. Quantum Electron.

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Abstract-Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-infrared region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.Index Terms -Si photonics, GeSn quantum wells, electroabsorption modulators, quantum-confined Stark effect, and many-body theory.

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Theoretical and Experimental Investigation of the Incident-Power-Dependent Extinction Ratio of an Electroabsorption Modulator Integrated With a Distributed Feedback Laser

Cited by 5 publications

References 17 publications

Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission

Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission

Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

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