Low cost 112 Gb/s InP DFB-EAM for PAM-4 2 km transmission

Caillaud, Christophe; Adrover, Mestre; Blache, F.; Pommereau, F.; Décobert, J.; Jorge, F.; Charbonnier, P.; Konczykowska, A.; Dupuy, Jean-Yves; Mardoyan, H.; Mekhazni, Karim; Paret, J-F.; Faugeron, Mickaël; Mallécot, F.; Achouche, M.

doi:10.1109/ecoc.2015.7341679

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…For most proposed 400 GbE applications intensity modulation with direct detection is a promising approach [1]- [5]. Two modulation schemes have been considered for these 400 Gbps systems.…”

Section: Introductionmentioning

confidence: 99%

III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser

Abbasi

Shiramin

Moeneclaey

et al. 2018

J. Lightwave Technol.

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Externally modulated lasers have proven to be key components for optical communication because of their compactness, low-power consumption, and speed. In this paper, we present unique heterogeneously integrated InP-on-Si electro-absorptionmodulated DFB lasers, which were used to implement two optical modulation schemes. The first scheme uses a double-sided externally modulated DFB laser. Two taper sections on each side of the single DFB laser are fabricated with an identical epitaxial structure as the laser and perform two roles: coupling the light to the underlying Si waveguide and acting as modulators. These taper sections are electrically isolated from the DFB laser cavity. Each section can independently be driven with a 56-Gb/s nonreturn-to-zero (NRZ) on-off-keying signal resulting in 112-Gb/s aggregate data transmission from the device over 2-km non-zero dispersion-shifted single-mode fiber. The second scheme is an original method to generate an optical pulse amplitude modulation (PAM) signal using a similar device structure. By simultaneously directly modulating the DFB laser and one of the tapers (operating as an electro-absorption modulator) with two independent NRZ signals, we demonstrate the generation of a PAM-4 signal. In this way, the PAM-4 signal generation can be shifted from the electrical to the optical domain in a rather simple and power efficient way. We demonstrate the transmission of 25-Gbaud PAM-4 over 2-km non-zero dispersion-shifted single-mode fiber.

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“…For most proposed 400 GbE applications intensity modulation with direct detection is a promising approach [1]- [5]. Two modulation schemes have been considered for these 400 Gbps systems.…”

Section: Introductionmentioning

confidence: 99%

III–V-on-Silicon C-Band High-Speed Electro-Absorption-Modulated DFB Laser

Abbasi

Shiramin

Moeneclaey

et al. 2018

J. Lightwave Technol.

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“…Transmission of 112 Gb/s PAM-4 channels was reported in the C-band over 80 km of single-mode fiber using erbium-doped fiber amplification and maximum likelihood sequence estimator (MLSE) equalization at the receiver 9 . As a means to avoid complex DSP, a higher bandwidth approach was reported using a 50 GHz electro-absorption modulator (EAM) to transmit 112 Gb/s over 2 km of single-mode fiber (SMF), requiring only a 3-tap Feed-Forward Equalizer (FFE) equalizer 10 . Besides the limited availability of broadband electro-optic components, such a wide-bandwidth approach comes with a number of implications to the overall system, the most salient of which concern the strict RF requirements for the PCB, the faster accumulation of dispersion that limits optical reach and the higher sampling rate required at the receiver's digital-to-analogue converter (DAC) due to the higher frequency components of the signal.…”

Section: Introductionmentioning

confidence: 99%

Scaling single-wavelength optical interconnects to 180 Gb/s with PAM-M and pulse shaping

et al. 2016

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Faced with surging datacenter traffic demand, system designers are turning to multi-level optical modulation with direct detection as the means of reaching 100 Gb/s in a single optical lane; a further upgrade to 400 Gb/s is envisaged through wavelength-multiplexing of multiple 100 Gb/s strands. In terms of modulation formats, PAM-4 and PAM-8 are considered the front-runners, striking a good balance between bandwidth-efficiency and implementation complexity. In addition, the emergence of energy-efficient, high-speed CMOS digital-to-analog converters (DACs) opens up new possibilities: Spectral shaping through digital filtering will allow squeezing even more data through low-cost, lowbandwidth electro-optic components. In this work we demonstrate an optical interconnect based on an EAM that is driven directly with sub-volt electrical swing by a 65 GSa/s arbitrary waveform generator (AWG). Low-voltage drive is particularly attractive since it allows direct interfacing with the switch/server ASIC, eliminating the need for dedicated, power-hungry and expensive electrical drivers. Single-wavelength throughputs of 180 and 120 Gb/s are experimentally demonstrated with 60 Gbaud optical PAM-8 and PAM-4 respectively. Successful transmission over 1250 m SMF is achieved with direct-detection, using linear equalization via offline digital signal processing in order to overcome the strong bandwidth limitation of the overall link (~20 GHz). The suitability of Nyquist pulse shaping for optical interconnects is also investigated experimentally with PAM-4 and PAM-8, at a lower symbol rate of 40 Gbaud (limited by the sampling rate of the AWG). To the best of our knowledge, the rates achieved are the highest ever using optical PAM-M formats.

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