Abstract:The wide band gap semiconductors like ZnS have gained tremendous response in the optoelectronic applications claiming their significant role in device operability at varied compositions and temperature. We have performed a detailed study of pure and Sn doped ZnS using Perdew-Burkhe-Ernzerhof (PBE) exchange correlation as embodied in Wien2k code. The doping of 6.25% Sn at Zn site, in ZnS has reduced the band gap (Eg) to 1.70 eV from 2.15 eV (Eg for bulk ZnS) thus making it more suitable for the applications of … Show more
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