Theoretical analysis of lateral modes in broad-area semiconductor lasers with profiled reflectivity output facets

Szymansi, M.; Kubica, J.M.; Szczepanski, Pawel

doi:10.1109/3.910454

Cited by 9 publications

(7 citation statements)

References 17 publications

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“…Condition (2) has been derived according to the fact that the mode intensity is restored after one round trip inside the resonator. On the other hand the pumped region of the laser can be treated as a planar waveguide supporting the TE fundamental mode [6]. Each field component of such a waveguide mode contains an exponential factor exp( ) i z β -, where β is the complex propagation constant.…”

Section: Resultsmentioning

confidence: 99%

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

Teisseyre

Szymański

Khachapuridze

et al. 2008

Phys. Status Solidi (c)

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Due to their undesirable spontaneous and piezoelectric polarizations, nitride structures grown along polar directions are subject to high built‐in electric fields. A promising means of overcoming the effects related to built‐in electric fields and, thereby, obtaining higher quantum efficiencies is to grow nitrides along a non‐polar direction. It is our intention to report our recent progress on non‐polar homo‐epitaxial structures grown by PAMBE along the (11$/bar 2$0) non‐polar direction. As a substrate we used GaN bulk crystals grown by the High Pressure Solution method and overgrown by HVPE. As has been previously reported, non‐polar AlGaN/GaN quantum wells possess sharp excitonic lines. We are able to present optically pumped laser action on separate confinement heterostructures. Laser action is clearly proved by spontaneous emission saturation, abrupt line narrowing, and the strong TE polarization of output light. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

Teisseyre

Szymański

Khachapuridze

et al. 2008

Phys. Status Solidi (c)

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“…provides the propagation constant. The optical confinement factor is defined as fraction of E y contained in quantum wells, while the far‐field pattern is calculated according to the standard one‐dimensional diffraction equation

I (Θ) = {true cos}^{2} (Θ) {|\int_{- \infty}^{+ \infty} E_{y} (x) exp (- i k_{0} x sin (Θ)) d x|}^{2},

where 2 θ is the angle of beam divergence.…”

Section: The Modelmentioning

confidence: 92%

Theoretical study of ultraviolet ZnO/Zn_0.8 Mg_0.2 O laser diodes on GaN or Al₂ O₃ substrates: Toward electrically pumped devices

Szymański

Teisseyre

Kozanecki

2014

Phys. Status Solidi A

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We propose a new type of laser structure based both on oxide and nitride semiconductors. Due to a lack of p‐type conductivity in the zinc oxide, we put forward the idea to use p‐type gallium nitride with ZnO/ZnMgO active region. Unfortunately, refractive index of nitrides is larger than in oxides, which means that the transverse mode will tend to propagate outside the active layer. We performed calculations of the optical confinement factor and the beam divergence by using the transfer matrix method. In our design, we use the concept of placing the waveguide layer outside the active region. This paper details the way to practical realization of such a novel device.

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“…Consequently, we calculate the far field pattern using the standard 1-dimensional diffraction equation [12]:…”

Section: Theorymentioning

confidence: 99%

Calculation of beam divergence of a quantum cascade laser by effective index method

et al. 2013

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Quantum cascade lasers (QCL's) have proven their usefulness as light sources in many applications, like remote gas sensing, molecular spectroscopy or free-space communication. In most cases the high-quality low-divergence beam is desired. This work presents the theoretical analysis of QCL's beam divergence. The electromagnetic field in the resonator is calculated according to effective index method. Theoretical results are compared with measurements.Keywords: quantum cascade laser, effective index method, beam divergence, far-field pattern.

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Theoretical analysis of lateral modes in broad-area semiconductor lasers with profiled reflectivity output facets

Cited by 9 publications

References 17 publications

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

Theoretical study of ultraviolet ZnO/Zn_0.8 Mg_0.2 O laser diodes on GaN or Al₂ O₃ substrates: Toward electrically pumped devices

Calculation of beam divergence of a quantum cascade laser by effective index method

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Theoretical analysis of lateral modes in broad-area semiconductor lasers with profiled reflectivity output facets

Cited by 9 publications

References 17 publications

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction

Theoretical study of ultraviolet ZnO/Zn0.8 Mg0.2 O laser diodes on GaN or Al2 O3 substrates: Toward electrically pumped devices

Calculation of beam divergence of a quantum cascade laser by effective index method

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Theoretical study of ultraviolet ZnO/Zn_0.8 Mg_0.2 O laser diodes on GaN or Al₂ O₃ substrates: Toward electrically pumped devices