Theoretical Analysis and Experimental Study on an Avalanche Transistor-Based Marx Generator

Li, Jiangtao; Zhong, Xu; Li, Jianhao; Liang, Zheng; Chen, Wenzhong; Zheng, Li; Li, Tao

doi:10.1109/tps.2015.2436373

Cited by 43 publications

(16 citation statements)

References 17 publications

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“…After solving the pulse width problem, the next question is how to reduce the pulse width while increasing the pulse source's output. It is difficult to meet all the parameters simultaneously due to the limitations of switching devices [19] [20]. Among various methods to generate nanosecond pulses, the avalanche transistor-based Marx bank circuit (MBC) gives a promising choice, due to the high switching speed of the avalanche transistor and the simplicity of the circuit [21].…”

Section: Introductionmentioning

confidence: 99%

Development of a High Peak Voltage Picoseconds Avalanche Transistor Based Marx Bank Circuit

Liu

et al. 2021

IEEE Access

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Avalanche transistor-based Marx bank circuit (MBC) is widely used to generate high voltage nanosecond pulses with high amplitude, high repetition rate, fast rise time, and low jitter. Researchers have tried to modify the circuit structure by using parallel or series avalanche transistors to increase peak power. However, in this work, the detailed process of analyzing and designing a compact Marx generator using avalanche transistors will be described. The purpose of this article is to report our experimental observations on the mechanism of operation of the MBCs. By studying the influence of amplitude and pulse width of the trigger circuit, a Gaussian pulse with a rising edge of 160 ps, full width at half maximum (FWHM) of 660 ps, and amplitude of 5000 V are obtained. The design improves the output voltage and pulse repetition frequency (PRF) effectively while reducing the use of the number of transistors. Based on the conventional principles of avalanche transistors and Marx circuit, a list of useful and interesting conclusions obtained from experiments will be reported.

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Section: Introductionmentioning

confidence: 99%

Development of a High Peak Voltage Picoseconds Avalanche Transistor Based Marx Bank Circuit

Liu

et al. 2021

IEEE Access

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“…A large variety of commercial generators providing nanosecond and sub-nanosecond current pulses approaching and even exceeding 100A are available (see http://www.fidtechnology.com/), but their large sizes and high prices make their use problematic. Much cheaper to use and more compact are avalanche transistor-based Marx circuits [4], which can provide reliable operation after simple modifications [5] in picosecond [6] switching at dozens amperes, or even at several hundred amperes [7] for ten nanoseconds or so. The transmitter in all these examples, however, cannot be considered either low-cost or miniature (i.e.…”

Section: Introductionmentioning

confidence: 99%

Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Vainshtein

Zemlyakov

Егоркин

et al. 2019

IEEE Trans. Power Electron.

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The-state-of-the-art in long-distance near-infrared optical radars is the use of laser-diodebased miniature pulsed transmitters producing optical pulses of 3-10 ns in duration and peak power typically below 40W. The duration of the transmitted optical pulses becomes a bottleneck in the task of improving the radar ranging precision, particularly due to the progress made in developing single photon avalanche detectors (SPADs). The speed of miniature highcurrent drivers is limited by the speed of the semiconductor switch, either a gallium nitride (GaN) field-effect transistor, the most popular alternative nowadays, or a silicon avalanche bipolar junction transistor (ABJT), which was traditional in the past. Recent progress in the physical understanding of peculiar 3-D transients promises further enhancement in speed and efficiency of properly modified ABJTs, but that is not the only factor limiting the transmitter speed. We show here that a low-inductance miniature transmitter assembly containing only a specially developed capacitor, a more advanced transistor chip than that used in commercial ABJTs and a laser diode has allowed peak power from 40 to 180 W to be reached in optical pulses of 1-2 ns in duration without afterpulsing relaxation oscillations. This finding is of interest for compact low-cost, long-distance decimetreprecision lidars, particularly for automotive applications.

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“…Large variety of commercial generators providing nanosecond and sub-nanosecond current pulses approaching and even exceeding 100A are available (see, e.g., http://www.fidtechnology.com/), but large size and prices make their application problematic. Much cheaper and compact is making use of avalanche transistor-based Marx circuits [4] providing reliable operation after simple modifications [5] in nanosecond and even picosecond switching at dozens amperes [6], or several hundred amperes for a pulses approaching a dozen nanoseconds. In all those examples, however, the transmitter cannot be considered as low cost or miniature (comparable in price and size with encapsulated laser diode), which are the criteria of principal importance for most of applications.…”

Section: Introductionmentioning

confidence: 99%

Nanosecond Miniature Transmitters for Pulsed Optical Radars

Filimonov

Zemlyakov

Егоркин

et al. 2017

Lecture Notes in Computer Science

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The-state-of-the-art in long-distance near-infrared optical radars is utilization the laser-diode-based miniature pulsed transmitters producing optical pulses of 3-10 ns in duration and peak power typically below 40W. The bandwidth of the receiving channel nowadays exceeds 300MHz, and thus the duration of the optical pulses exceeding 3 ns is a bottleneck in the task of high practical importance, namely increase in the radar ranging precision. Nowadays the speed of the high-current drivers is limited by the speed of a semiconductor switch that is typically field-effect transistor or an avalanche switch. The last one provides faster switching, and development of new avalanche switches is very challenging and important task, but this is not the only factor limiting the transmitter speed. Here we show that not only the switch, but also parasitic inductance in the miniature assembly and type of the capacitor play very important role in solving the problem of long-distance decimeterprecision radar.

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Theoretical Analysis and Experimental Study on an Avalanche Transistor-Based Marx Generator

Cited by 43 publications

References 17 publications

Development of a High Peak Voltage Picoseconds Avalanche Transistor Based Marx Bank Circuit

Development of a High Peak Voltage Picoseconds Avalanche Transistor Based Marx Bank Circuit

Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Nanosecond Miniature Transmitters for Pulsed Optical Radars

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