Theoretical accuracy of using Boltzmann and ionized impurity approximations in the analyses of recombination current at interface traps in metal-oxide-silicon structures

Chen, Zuhui; Jie, B.B.; Sah, C. T.

doi:10.1063/1.2159085

Cited by 3 publications

(2 citation statements)

References 18 publications

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“…If interface traps in the whole bandgap of Si are equivalent to the single energy level E it , there will be an effective interface trap density of N it . Thus, the recombination current via interface traps B-peak can be given [19], [30], [31]:…”

Section: DCIV Theory and Measurement Configurationmentioning

confidence: 99%

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Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO 2 back-gate interface of SOI NMOSFETs during irradiation are studied by the direct-current current-voltage technique. When transistors are subjected to radiation, DCIV bulk current increases. The calculated results suggest that the interface trap density increases and its equivalent energy level is far away from the midgap with irradiation dose increasing, which can be explained by the energy distribution of interface traps. The interface trap energy density D IT (E IT ) as a function of the energy level E IT has been obtained by the least square optimization and shows the typical ''U-shape'' distribution. In detail, the rising humps at equivalent energy level in D IT (E IT ) curves are due to Si-H bonds that are broken down after irradiation, which corresponds to the increasing trap density. Moreover, it is found that the energy level of interface traps is redistributed after irradiation. The peak of humps in D IT (E IT ) curves occurs at the farther energy level with the increase of dose, which is similar to the equivalent energy level. It might arise from the shallow energy level of interface traps induced by radiation.INDEX TERMS SOI, interface traps, radiation, energy distribution.

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Section: DCIV Theory and Measurement Configurationmentioning

confidence: 99%

“…Then, the parameters can be extracted from the bulk current (I B ) versus the back-gate voltage (V BG ) characteristics such as interface trap density (N it ), equivalent energy level (E it ) and interface trap energy density (D IT (E IT )) [18], [31].…”

Section: DCIV Theory and Measurement Configurationmentioning

confidence: 99%

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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Temperature dependences of surface recombination DC current–voltage characteristics in MOS structures

Chen

Jie

Sah

2006

Solid-State Electronics

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Effects of energy distribution of interface traps on recombination dc current-voltage line shape

Chen

Jie

Sah

2006

Journal of Applied Physics

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High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors J. Appl. Phys.Triplet recombination at P b centers and its implications for capture cross sections J. Appl. Phys. 97, 056101 (2005); 10.1063/1.1851593 Ultimate gate oxide thinness set by recombination-tunneling of electrons via Si-SiO 2 interface trapsThe effects of energy distributions of Si/ SiO 2 interface traps in the energy gap of oxidized silicon on the current versus voltage line shape of the electron-hole recombination current are analyzed using the steady-state Shockley-Read-Hall kinetics. Slater's ͓Insulators, Semiconductors and Metals; Quantum Theory of Molecules and Solids ͑McGraw-Hill, New York, 1967͔͒ localized bulk perturbation theory applied by us to the interface anticipates U-shaped energy distributions of the density of neutral electron and hole interface traps from random variations of the Si:Si and Si:O bond angles and lengths. Conservation in dissipative transition energy anticipates the rate of electron capture into neutral electron trap to be faster for electron trap energy levels nearer the conduction band edge, and similarly, the rate of hole capture into neutral hole trap to be faster for hole trap energy levels nearer the valence band edge. Line shape broadening is analyzed for discrete and U-shaped energy distributions of interface trap energy levels. The broadened line shapes observed in past experiments, previously attributed to spatial variations of surface dopant impurity concentrations, could also arise from energy distributions of interface trap energy levels.

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Theoretical accuracy of using Boltzmann and ionized impurity approximations in the analyses of recombination current at interface traps in metal-oxide-silicon structures

Cited by 3 publications

References 18 publications

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Temperature dependences of surface recombination DC current–voltage characteristics in MOS structures

Effects of energy distribution of interface traps on recombination dc current-voltage line shape

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