Effects of energy distribution of interface traps on recombination dc current-voltage line shape

Abstract

High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors J. Appl. Phys.Triplet recombination at P b centers and its implications for capture cross sections J. Appl. Phys. 97, 056101 (2005); 10.1063/1.1851593 Ultimate gate oxide thinness set by recombination-tunneling of electrons via Si-SiO 2 interface trapsThe effects of energy distributions of Si/ SiO 2 interface traps in the energy gap of oxidized silicon on the current versus voltage line shape of the electron-hole recombination current are analyzed using the steady-state Shockley-Read-Hall kinetics. Slater's ͓Insulators, Semiconductors and Metals; Quantum Theory of Molecules and Solids ͑McGraw-Hill, New York, 1967͔͒ localized bulk perturbation theory applied by us to the interface anticipates U-shaped energy distributions of the density of neutral electron and hole interface traps from random variations of the Si:Si and Si:O bond angles and lengths. Conservation in dissipative transition energy anticipates the rate of electron capture into neutral electron trap to be faster for electron trap energy levels nearer the conduction band edge, and similarly, the rate of hole capture into neutral hole trap to be faster for hole trap energy levels nearer the valence band edge. Line shape broadening is analyzed for discrete and U-shaped energy distributions of interface trap energy levels. The broadened line shapes observed in past experiments, previously attributed to spatial variations of surface dopant impurity concentrations, could also arise from energy distributions of interface trap energy levels.

High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

“…7 The spatial variation in the interface-trap density N IT ͑y͒ cm −2 affects the R-DCIV lineshape only when the impurity concentration is not spatially constant, P IM ͑x =0, y͒ constant. The dependence of R-DCIV lineshape on interface-trap density indicates that the broadened lineshape observed in the past experiments, previously attributed to spatial variation in surface dopant impurity concentration 6,7 and energy distribution of interface traps, 12 can also arise from interface-trap concentration along surface channel region. Q IT = 0.…”

“…8͒ after it was in dormant for 33 years. [10][11][12] In order to distinguish the Bardeen surface-state model 13 and Slater bulk impurity-state model, 14 we designate the random bond angle and length defects or atomic perturbations, which are electrically neutral viewed from afar, i.e., many atomic spacing away, as the Sah interface-trap model, which will be the one studied throughout this article and future reports, without further elaboration as the "neutral interface-trap" model. In this paper, we will explore the high concentration effects of interface traps on the R-DCIV properties such as its lineshape, defined as the dc base-terminal current versus dc voltage applied to the gate terminal, I B -V GB .…”

“…Since the c ns / c ps ratio has a small effect on the normalized R-DCIV lineshape, 12 we assume that the electron and hole capture rates are equal with c ns = c ps =10 −8 cm −3 / s. Transistor temperature T is 296.57 K at which the intrinsic carrier concentration is n i =10 10 cm −3 . Similarly, N ET ‫ء‬ can be defined as the effective electron-trap density at the middle of the silicon energy gap and N ET ‫ء‬ = R ϫ N HT ‫ء‬ .…”

“…7 However, these results were based on assumption that the energy level of interface trap is at the midgap, i.e., E TI = E T -E I = 0 eV, and the interface-trap charge along channel region is zero, i.e. 12 Thus, we will not include the two effects on the R-DCIV lineshape in this paper. In this paper, we remove these assumptions.…”

Compact modeling for GaN HEMT devices

“…These two equations are for interface traps with a single trap energy (STE) level in the band gap. However, interface traps normally are continuously distributed as reported in [106]- [108]. With multiple trap energy (MTE) function, these two equations are rewritten as [109], [110]   the measured circuit (c) simplified circuit of (a).…”