The δ-Doping-Dependent Spin Polarization in a Both Magnetically and Electrically Confined Semiconductor Heterostructure

Liu, Guixiang; Tang, Ge; Ma, Wenyue

doi:10.1007/s11664-019-07023-x

Cited by 4 publications

(1 citation statement)

References 30 publications

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“…Due to low dimensionality, small size and quantum confinement, an MMSM contains some novel quantum effects [4], e.g. spin filtering [5][6][7], giant magnetoresistance (GMR) [8,9] and Goos-Hänchen shift [10,11]. These important effects can be used to develop new electronic devices, such as GMR devices [12] and spatial spin splitters [13].…”

Section: Introductionmentioning

confidence: 99%

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

Liu¹,

Tang²,

Liu³

et al. 2021

Commun. Theor. Phys.

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We theoretically explore the manipulation of a temporal electron-spin splitter by a δ-potential in an embedded magnetic-electric-barrier microstructure (EMEBM), which is constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe on the top and bottom of an InAs/Al x In1−x As heterostructure, respectively. Spin polarization of the dwell time remains, even though a δ-potential is inserted by atomic-layer doping. Both the magnitude and sign of the spin-polarized dwell time can be manipulated by changing the weight or position of the δ-potential. Thus, a structurally controllable temporal electron-spin splitter can be obtained for spintronics device applications.

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