The variation of energy gap with composition in ZnS-Te alloys

Hill, R.; Richardson, D.J.

doi:10.1088/0022-3719/6/5/009

Cited by 77 publications

(18 citation statements)

References 13 publications

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“…According to the Hill-Richardson model, 17 the bowing factor b can be written as where a is lattice constant of ternary alloys. By using Murnahan's equation…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Fang

Liu

et al. 2002

Phys. Rev. B

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ZnS 1Ϫx Te x (0.02рxр0.3) alloys are studied by photoluminescence under hydrostatic pressure at room temperature. Only a wide emission band is observed for each sample. Its peak energy is much lower than the corresponding band gap of alloys. These bands are ascribed to the radiative annihilation of excitons bound at Te n (nу2) isoelectronic centers. The pressure coefficients of the emission bands are smaller than those of alloy band gaps from 48% to 7%. The difference of the pressure coefficient of the emission band and the band gap increases when the binding energy of Te n centers decreases. It seems contrary to our expectation and needs further analysis. The integrated intensities of emission bands decrease with increasing pressure due to the decreasing of the absorption coefficient associated with the Te n centers under pressure. According to this model the Stokes shifts between the emission and absorption bands of the Te n centers are calculated, which decrease with the increasing Te composition in alloys.

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“…According to the Hill-Richardson model, 17 the bowing factor b can be written as where a is lattice constant of ternary alloys. By using Murnahan's equation…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Fang

Liu

et al. 2002

Phys. Rev. B

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“…Due to its applied interest, the band gap dependence on composition has been widely studied. [10][11][12][13][14][15][16][17][18] Understanding the band gap ͑E g ͒ dependence on composition ͑x͒ is also of fundamental interest. The band gap of the AB x C 1−x semiconductor alloys strongly deviates from the average gap of the constituents.…”

Section: Introductionmentioning

confidence: 99%

X-ray-absorption fine-structure study of ZnSexTe1−x alloys

Pellicer‐Porres¹,

Polian²,

Segura

et al. 2004

Journal of Applied Physics

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X-ray-absorption fine-structure experiments at different temperatures in ZnSe x Te 1−x (x = 0, 0.1, 0.2, 0.55, 0.81, 0.93, 0.99, and 1.0) have been performed in order to obtain information about the structural relaxation and disorder effects occurring in the alloys. First and second neighbor distance distributions have been characterized at the Se and Zn K edges, using multiple-edge and multiple-scattering data analysis. The first neighbor distance distribution was found to be bimodal. The static disorder associated with the Zn-Te distance variance did not depend appreciably on composition. On the other hand, the static disorder associated with the Zn-Se distance increased as the Se content diminished. Using the bonding angle information provided by our experiments the point of view of the anion has been related to that of the cation. The resulting structural model indicates that Zn tetrahedra surrounding the anions remain essentially undistorted, but forced to tilt from their ideal zincblende orientation to accommodate the minority element. The main origin of structural disorder is suggested.

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“…The least square fit yields b = 0.55 eV, which is slightly larger than that of bulk (0.41 ~ 0.48 eV), but lower than that obtained by Yoon (0.79 eV) [18,31,35]. As we know, bowing parameter b in a mixed crystal of A x B 1- x C reflects their miscibility between AC and BC [30,36,37]. From this point of view, the lower b value in our work demonstrates that the ternary alloys annealed under 350°C have relatively uniform element distribution.…”

Section: Resultsmentioning

confidence: 90%

Facile synthesis of composition-tuned ZnO/Zn x Cd1-x Se nanowires for photovoltaic applications

Luo

et al. 2015

Nanoscale Res Lett

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ZnO/ZnxCd1-xSe coaxial nanowires (NWs) have been successfully synthesized by combining chemical vapor deposition with a facile alternant physical deposition method. The shell composition x can be precisely tuned in the whole region (0 ≤ x ≤ 1) by adjusting growth time ratio of ZnSe to CdSe. As a result, the effective bandgaps of coaxial nanowires were conveniently modified from 1.85 eV to 2.58 eV, almost covering the entire visible spectrum. It was also found that annealing treatment was in favor of forming the mixed crystal and improving crystal quality. An optimal temperature of 350°C was obtained according to our experimental results. Additionally, time resolved photo-luminescence spectra revealed the longest carrier lifetime in ZnO/CdSe coaxial nanowires. As a result, the ZnO/CdSe nanowire cell acquired the maximal conversion efficiency of 2.01%. This work shall pave a way towards facile synthesis of ternary alloys for photovoltaic applications.

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The variation of energy gap with composition in ZnS-Te alloys

Cited by 77 publications

References 13 publications

Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

Photoluminescence fromZnS1−xTexalloys under hydrostatic pressure

X-ray-absorption fine-structure study of ZnSexTe1−x alloys

Facile synthesis of composition-tuned ZnO/Zn x Cd1-x Se nanowires for photovoltaic applications

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