The valence state of Yb metal under high pressure determined by XANES measurement up to 34.6 GPa

Fuse, Akinori; Nakamoto, G.; Kurisu, Makio; Ishimatsu, Naoki; Tanida, Hajime

doi:10.1016/j.jallcom.2003.12.035

Cited by 19 publications

(19 citation statements)

References 11 publications

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“…Doyle et al 20 13 ) with pressure as observed in Yb metal. 37 But at present we do not understand why Yb valence saturates around v∼2.55. It is important to note that normally the superconducting state is destroyed as the magnetic component increases.…”

Section: B Pfy-xas and Rxes: Temperature And Pressure Dependencesmentioning

confidence: 87%

Electronic structure of YbGa1.15Si0.85and YbGa
Yamaoka
¹
,
Jarrige
²
,
Tsujii
³

et al. 2011
Phys. Rev. B

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Section: B Pfy-xas and Rxes: Temperature And Pressure Dependencesmentioning

confidence: 87%

Electronic structure of YbGa1.15Si0.85and YbGa
Yamaoka
¹
,
Jarrige
²
,
Tsujii
³

et al. 2011
Phys. Rev. B

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“…Figure 1(a) shows the R(ω) spectra at pressures up to 5 GPa. In this pressure range, the Yb valence determined by XAS does not change very much, 3) but the resistivity of Yb increases with increasing pressure until an fcc-bcc structural phase transition occurs at approximately 4 GPa. 4) After the transition, the resistivity drops to a value close to that at ambient pressure.…”

Section: 3)mentioning

confidence: 92%

Pressure-Tuning of thec–fHybridization in Yb Metal Detected by Infrared Spectroscopy up to 18 GPa

et al. 2007

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It has been known that the elemental Yb, a divalent metal at ambient pressure, becomes a mixed-valent metal under external pressure, with its valence reaching ∼ 2.6 at 30 GPa. In this work, infrared spectroscopy has been used to probe the evolution of microscopic electronic states associated with the valence crossover in Yb at external pressures up to 18 GPa. The measured infrared reflectivity spectrum [R(ω)] of Yb has shown large variations with pressure. In particular, R(ω) develops a deep minimum in the mid-infrared, which shifts to lower energy with increasing pressure. The dip is attributed to optical absorption due to a conduction (c)-f electron hybridization state, similarly to those previously observed for heavy fermion compounds. The red shift of the dip indicates that the c-f hybridization decreases with pressure, which is consistent with the increase of valence.KEYWORDS: Yb metal, valence crossover, infrared synchrotron radiation, high pressure, diamond anvil cell Physical properties of strongly correlated "heavy fermion" compounds, most typically Ce-or Yb-based compounds containing partly filled 4f shell, have attracted much attention.1) In heavy fermion compounds, the hybridization between the conduction (c) electrons and the otherwise localized f electrons leads to many interesting phenomena, such as a crossover between itinerant and localized characters of the f electrons, and the formation of heavy fermion.Elemental Yb is a divalent metal at ambient pressure, hence the f electron configuration is 4f 14 with no local magnetic moment. However, it has been shown using Xray absorption spectroscopy (XAS) that the valence of Yb increases under external pressure, reaching ∼ 2.6 at 30 GPa.2, 3) Namely, Yb is a mixed-valent metal in this pressure range. Since the number of localized 4f holes increases with this valence crossover, it can be viewed from the 4f hole point of view as a crossover from an itinerant to a localized regime. Equivalently, it can be also viewed that the c-f hybridization becomes weaker as the applied pressure increases. Hence Yb can be regarded as an f electron system where an itinerant-localized crossover can be caused, and where the c-f hybridization can be tuned, by the external pressure. In addition, Yb has another interesting property: its resistivity (ρ) increases under pressure up to ∼ 4 GPa.4) It has been suggested by band structure calculation that the increase of ρ with pressure is due to a pseudogap formation at the Fermi level (E F ). 5)In this work, we have probed the interesting electronic structures of Yb metal under pressure using infrared (IR) reflectivity [R(ω)] measurement. IR spectroscopy has been quite successful in probing the electronic structures associated with the c-f hybridized state in mixedvalent heavy fermion compounds.6-9) We have used a diamond anvil cell (DAC) to produce high pressure. It * E-mail: okamura@kobe-u.ac.jp is technically challenging to do reflectivity experiment within the limited sample space in a DAC using long wavelength IR radiation....

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“…Typically in Yb-based crystalline compounds, divalent Yb shifts toward trivalent Yb under pressure because trivalent Yb has a smaller ionic radius. 8,9 This behavior should be applicable to quasicrystalline compounds. This study focuses on the icosahedral quasicrystal of Cd 5.7 Yb͑iCd-Yb͒.…”

mentioning

confidence: 99%

“…This method allows the Yb valence to be directly determined even under pressure. 8,9 The transmission XANES spectra were acquired by scanning the incident x-ray energy between 8.77-9.11 keV using two ionization chambers filled with N 2 gas to monitor the incident and transmitted x-ray intensities. The 30ϫ 30 m 2 incident beam was exposed to the sample with a homogenous thickness utilizing the precise alignment system of the diffractometer for DAC in BL22XU.…”

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confidence: 99%

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Intermediate-valence quasicrystal of a Cd-Yb alloy under pressure

et al. 2010

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A quasiperiodic intermediate-valence system was prepared by applying pressure to an icosahedral Cd-Yb quasicrystal. In this system, each quasiperiodic lattice point has a charge degree of freedom. Yb L III x-ray absorption spectroscopy experiments demonstrate that the Yb valence increases continuously upon compression from a divalent state at ambient pressure and reaches 2.33 at 31.7 GPa. A comparison study to the crystalline approximant suggests that the quasiperiodically arranged Yb ions have a homogeneous intermediate valence that takes a valence fluctuation state under pressure.

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The valence state of Yb metal under high pressure determined by XANES measurement up to 34.6 GPa

Cited by 19 publications

References 11 publications

Electronic structure of YbGa1.15Si0.85and YbGa
Yamaoka
¹
,
Jarrige
²
,
Tsujii
³

et al. 2011
Phys. Rev. B

Electronic structure of YbGa1.15Si0.85and YbGa
Yamaoka
¹
,
Jarrige
²
,
Tsujii
³

et al. 2011
Phys. Rev. B

Pressure-Tuning of thec–fHybridization in Yb Metal Detected by Infrared Spectroscopy up to 18 GPa

Intermediate-valence quasicrystal of a Cd-Yb alloy under pressure

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The valence state of Yb metal under high pressure determined by XANES measurement up to 34.6 GPa

Cited by 19 publications

References 11 publications

Electronic structure of YbGa1.15Si0.85and YbGaYamaoka1, Jarrige2, Tsujii3 et al. 2011Phys. Rev. B

Electronic structure of YbGa1.15Si0.85and YbGaYamaoka1, Jarrige2, Tsujii3 et al. 2011Phys. Rev. B

Pressure-Tuning of thec–fHybridization in Yb Metal Detected by Infrared Spectroscopy up to 18 GPa

Intermediate-valence quasicrystal of a Cd-Yb alloy under pressure

Contact Info

Product

Resources

About

Electronic structure of YbGa1.15Si0.85and YbGa
Yamaoka
¹
,
Jarrige
²
,
Tsujii
³

et al. 2011
Phys. Rev. B

Electronic structure of YbGa1.15Si0.85and YbGa
Yamaoka
¹
,
Jarrige
²
,
Tsujii
³

et al. 2011
Phys. Rev. B