The vacuum ultraviolet photodissociation of silane at 125.1 nm

Glenewinkel‐Meyer, Th.; Bartz, Jeffrey A.; Thorson, G. M.; Crim, F. Fleming

doi:10.1063/1.465893

Cited by 22 publications

(14 citation statements)

References 53 publications

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“…Recent laboratory experiments investigated the photochemistry of silane and the subsequent reactions of the photodissociation products. These data suggested that more complex, hydrogenated silicon clusters of the generic formula Si 2 H x (x = 1-6) are formed in these processes (Cook et al 2001;Zavelovich & Lyman 1989;Hu et al 2003;Glenewinkel-Meyer et al 1993;Tonokura et al 1992;Perkins et al 1979;Borsella et al 1988;Ashfold et al 1996;Aka & Boch 2002;Wang & Huang 1998;Oikawa et al 1994). Their experiments suggest that a rich silane chemistry is expected in the circumstellar envelope of IRC+10216: photochemistry of silane molecules close to the photosphere could contribute to the formation of small hydrogenated silicon clusters of the generic formula Si 2 H x .…”

Section: Introductionmentioning

confidence: 96%

Infrared spectroscopic studies of hydrogenated silicon clusters

Kaiser

Osamura

2005

A&A

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Abstract. Silicon-bearing species Si 2 H x (x = 1-6) are probable candidates in the circumstellar envelope of IRC+10216. We have observed several fundamentals of new silicon-containing radicals Si 2 H 3 and Si 2 H 5 in addition to the well-known Si 2 H 4 and Si 2 H 6 species from infrared spectroscopy in low temperature silane matrices at 10 K. Several infrared bands identify the Si 2 H x species and can be used to search for these molecules in the circumstellar envelope of IRC+10216. These infrared bands are confirmed by ab initio quantum chemical calculation as well as via corresponding infrared spectra detected for the deuterated species Si 2 D x .

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Section: Introductionmentioning

confidence: 96%

Infrared spectroscopic studies of hydrogenated silicon clusters

Kaiser

Osamura

2005

A&A

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“…In the present paper, we apply the BEB model to 11 molecules of great current interest in the modeling of chemical vapor deposition ͑CVD͒ and plasma enhanced chemical vapor deposition ͑PECVD͒ of semiconductors: [4][5][6][7] SiH, SiH 2 , SiH 3 , SiH 4 , Si 2 H 6 , Si͑CH 3 ͒ 4 , GeH, GeH 2 , GeH 3 , GeH 4 , and Ge 2 H 6 . Silane (SiH 4 ) is widely used for plasma assisted deposition of silicon and amorphous silicon-hydride ͑a:SiH͒ films.…”

Section: Introductionmentioning

confidence: 99%

Electron-impact total ionization cross sections of silicon and germanium hydrides

Ali

Kim

Hwang

et al. 1997

The Journal of Chemical Physics

104

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Electron-impact total ionization cross sections of some silicon and germanium compounds have been calculated by applying a new theoretical model that has been found to be reliable for a wide range of molecules. The new theory, the binary-encounter-Bethe (BEB) model, combines the binary-encounter theory and the Bethe theory for electron-impact ionization, and uses simple theoretical molecular orbital data-binding energies, average kinetic energies, and occupation numbers-which are readily available from molecular structure codes. Total ionization cross sections of SiH, SiH 2 , SiH 3 , SiH 4 , Si 2 H 6 , Si(CH 3 ) 4 , GeH, GeH 2 , GeH 3 , GeH 4 , and Ge 2 H 6 are presented for incident electron energies T from threshold to 1 keV, and compared to available experimental data. Theory and experiment agree well for SiH x , x=1-4, from thresholds to T<80 eV, while theoretical peaks occur at lower T than experimental peaks for SiH x , x=1-3. No experimental data are available for germanium hydrides for comparison. The theoretical cross sections are given by a compact analytic form suitable for applications in plasma processing. ©1997 American Institute of Physics. History:Received 27 January 1997; accepted 4 March 1997 Electron-impact total ionization cross sections of some silicon and germanium compounds have been calculated by applying a new theoretical model that has been found to be reliable for a wide range of molecules. The new theory, the binary-encounter-Bethe ͑BEB͒ model, combines the binary-encounter theory and the Bethe theory for electron-impact ionization, and uses simple theoretical molecular orbital data-binding energies, average kinetic energies, and occupation numbers-which are readily available from molecular structure codes. Total ionization cross sections of SiH, SiH 2 , SiH 3 , SiH 4 , Si 2 H 6 , Si͑CH 3 ͒ 4 , GeH, GeH 2 , GeH 3 , GeH 4 , and Ge 2 H 6 are presented for incident electron energies T from threshold to 1 keV, and compared to available experimental data. Theory and experiment agree well for SiH x , xϭ1 -4, from thresholds to T Ͻ80 eV, while theoretical peaks occur at lower T than experimental peaks for SiH x , xϭ1 -3. No experimental data are available for germanium hydrides for comparison. The theoretical cross sections are given by a compact analytic form suitable for applications in plasma processing.

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“…The electron-molecule scattering cross sections are required in modeling planetary atmospheres, molecular clouds in interstellar space, fusion reactors, plasma processing [1][2][3][4], etc. Silicon hydrides are important species in plasma etching, chemical vapor deposition techniques, and glow discharge deposition [5].…”

Section: Introductionmentioning

confidence: 99%

Electron-impact cross sections ofSiH2using theR-matrix method at low energy

Bharadvaja

Kaur²,

Baluja

2015

Phys. Rev. A

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The electron-impact collision cross sections are calculated for a SiH 2 molecule using the R-matrix approach in the low-energy range. The elastic and electron-excited inelastic cross sections are calculated in the correlated and uncorrelated approximations. All electronic states arising due to single-electron transitions from Hartree-Fock configurations up to threshold are considered in the target wave-function expansion. Partial waves up to l = 4 are used to represent continuum electron orbitals. The Born corrected converged cross sections are obtained for the radical with a nonzero dipole moment by considering the contributions of higher partial waves (l > 4). The effect of a small dipole moment on cross sections is analyzed. Besides determining the cross sections, the role of active space in the target and scattering problem, including the resonances is discussed. This work reports elastic, inelastic, and differential cross sections and few-electron-collision energy-transfer parameters. In particular, we show the viscosity cross sections and rate coefficients for elastic and electron-excited processes.

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The vacuum ultraviolet photodissociation of silane at 125.1 nm

Cited by 22 publications

References 53 publications

Infrared spectroscopic studies of hydrogenated silicon clusters

Infrared spectroscopic studies of hydrogenated silicon clusters

Electron-impact total ionization cross sections of silicon and germanium hydrides

Electron-impact cross sections ofSiH2using theR-matrix method at low energy

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