The use of narrow nuclear resonances in the study of alternative metal-oxide–semiconductor structures

Driemeier, Carlos; Miotti, Leonardo; Pezzi, Rafael Peretti; Bastos, Karen Paz; Baumvol, I. J. R.

doi:10.1016/j.nimb.2006.04.013

Cited by 25 publications

(48 citation statements)

References 30 publications

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“…18 O profiles were determined using the narrow resonance (C $ 100 eV) in the cross section curve of the 18 O(p,a) 15 N nuclear reaction at 151 keV. 31 Al was thermally evaporated to obtain MOS structures using a mechanical mask aiming at forming circular capacitors with a diameter of 200 lm. An InGa eutectic was used as back contact.…”

mentioning

confidence: 99%

SiO2/SiC structures annealed in D218O: Compositional and electrical effects

Pitthan

Corrêa

Soares

et al. 2014

Applied Physics Letters

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Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region.

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mentioning

confidence: 99%

SiO2/SiC structures annealed in D218O: Compositional and electrical effects

Pitthan

Corrêa

Soares

et al. 2014

Applied Physics Letters

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“…16 18 O concentration profiles were determined from experimental excitation curves (alpha particle yield versus incident proton energy) using the FLATUS code. 17 Group ii: Samples submitted to sequential SiO 2 removal/growth steps and to H 2 O 2 treatments.-A set of three 4H-SiC samples underwent thermal treatment at atmospheric pressure in a horizontal quartz tube furnace at 400 C for 4 h, bubbling O 2 in H 2 O 2 at 50 C, followed by etching in HF aqueous solution (1:4) for 10 min. Samples were then oxidized in 18 O 2 under the same conditions than that used for group i, and sample ii1 was separated for analysis.…”

Section: Methodsmentioning

confidence: 99%

Effect of Reoxidations and Thermal Treatments with Hydrogen Peroxide in the SiO2/SiC Interfacial Region

Pitthan

Corrêa

Palmieri

et al. 2011

Electrochem. Solid-State Lett.

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Thermal growth/removal steps of SiO 2 films are largely used in the fabrication of electronic devices. The effect on the SiO 2 thermal growth rate and on the SiO 2 /SiC interfacial region thickness of samples submitted to sequential steps of removal/growth of Si 18 O 2 on 4H-SiC was investigated, using nuclear reaction analyses, in the Si and C faces interspersed or not with a H 2 O 2 thermal treatment. In the Si face structures the H 2 O 2 treatment lead to a reduction of the SiO 2 /SiC interfacial region and to an increase in the SiO 2 growth rate. Results of additional experiments performed to investigate the effects of the H 2 O 2 treatment are also reported.Silicon carbide (SiC) is an alternative semiconductor to substitute Si in device applications that require high-power (>3 kW), high-frequency (>5 GHz), and/or high-temperature (>300 C). 1-3 In addition, a SiO 2 film can be thermally grown in a similar way to that on Si, allowing the technology used to produce MOS (metal-oxidesemiconductor) devices to be adapted to the case of SiC. 4 However, MOS devices based on SiC did not reach the maximum of their potential because of the high interface state density (D it ) in the SiO 2 /SiC interface 3 attributed, at least partially, to the presence of silicon oxycarbides (SiC x O y ) and/or C-rich regions in the interfacial region. 5,6 These carbonaceous compounds were observed to present a high chemical inertness when submitted to different chemical environments. 7 Among the treatments that can significantly reduce this D it , post-oxidation annealings in NO followed by H 2 were shown to be the most efficient. 8 Previous investigations evidenced that NO treatments can partially remove SiC x O y and reduce this interfacial region thickness. 9 Reduction of the C species in the SiO 2 film bulk as well as reduction of the D it in films thermally grown in N 2 O and then annealed in Ar by rapid thermal processing (RTP) was also recently reported. 10 A flux of O 2 bubbled through hydrogen peroxide (H 2 O 2 ) also proved to be efficient, due to the high oxidizing power of the H 2 O 2 which can partially remove these SiC x O y . 11 The thickness of this interfacial region was observed to be inversely proportional to the channel mobility of MOSFETs. 12 Thus a reduction of this interfacial region should improve the electrical properties in the SiO 2 /SiC interface, allowing SiC-MOS devices to reach the maximum of their potential. To accomplish these goals, the influence of previously neglected factors must be understood. Due to the technological need of sequential thermal growths followed by etchings steps, 13 it is important to understand how this interfacial region behaves when submitted to those repeated processes.In the present work, 4H-SiC substrates were submitted to sequential removal/growth steps of SiO 2 films (reoxidations) a different number of times. Samples were probed by nuclear reaction analysis (NRA) and nuclear reaction profiling (NRP). Also, sequential reoxidation steps were interspersed with a treatment whi...

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“…Several techniques are nowadays available for this kind of studies 1. Ion‐based techniques like nuclear reaction profiling (NRP)2 and medium energy ion scattering (MEIS)3 are the techniques of choice to profile ultra‐thin films in general and oxides in particular 4–8. MEIS is a high‐resolution backscattering technique that has attracted a lot of attention in the past 10 years due to its capabilities of resolving elements of similar mass and even isotopes.…”

Section: Introductionmentioning

confidence: 99%

Depth profiling techniques: how PIXE compares to NRP and MEIS?

et al. 2011

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The aim of the present work is to check the potentialities of particle-induced X-ray emission (PIXE) as an analytical tool for measurement of ultra-thin film thicknesses in the nanometer scale. To that end, several different thin oxide films (HfO 2 , LaScO 3 , LaAlO 3 and Al 2 O 3 ) in the range of 2-60 nm were grown on crystalline Si. Film thickness measurements using 2.0 and 0.4 MeV proton PIXE, 40 and 200 keV proton medium energy ion scattering (MEIS), and 991.9 keV proton nuclear reaction profiling (NRP) were compared. For the simple target structures studied in this work, the results indicate that PIXE provides thicknesses compatible to those obtained with NRP and MEIS. However, PIXE analysis proved to be difficult in some cases, particularly when close-by elements with overlapping X-ray peaks are involved. For such cases, MEIS and NRP present clear advantages over PIXE.

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The use of narrow nuclear resonances in the study of alternative metal-oxide–semiconductor structures

Cited by 25 publications

References 30 publications

SiO2/SiC structures annealed in D218O: Compositional and electrical effects

SiO2/SiC structures annealed in D218O: Compositional and electrical effects

Effect of Reoxidations and Thermal Treatments with Hydrogen Peroxide in the SiO2/SiC Interfacial Region

Depth profiling techniques: how PIXE compares to NRP and MEIS?

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