The thickness effect to optical properties of SnO₂ thin film with doping fluorine

Abstract

Synthesis of SnO2:F thin layer was grown using the sol-gel spin coating method on a glass substrate with various layers (one to four layers). The purpose of the synthesis was to determine the optical properties of thin layers including transmittance, absorbance, energy bandgap, and activation energy. The optical properties of the layers were characterized using UV-Vis spectrophotometers with a wavelength of 200-1100 nm. The results showed that at a wavelength of 300 nm the absorbance value decreased with an increasing number of layers. Absorbance values obtained for variations in layers (one to four layers) for the percentage of 95:5% and 75:25%, respectively 3.59-2.85 and 4.30-3.42, while the transmittance value decreased, namely 96.8-79.6% and 98.3-81.1%. Besides, the energy bandgap obtained decreases with an increasing number of layers. The energy bandgap decreased from 3.69-3.56 eV and 3.59-3.42 eV for direct allowed, while 4.00-3.91 eV and 3.96-3.83 eV for indirect allowed. Activation energy decreased from 0.23-0.07 eV and 4.35-1.43 eV.

Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications

“…This is because the greater the bandgap energy value possessed by the thin layer, the more difficult it becomes for electrons to move from the valence band to the conduction band. However, unlike a material that has lower bandgap energy, electrons will more easily move from the valence band to the conduction band (Doyan, et al, 2020;Susilawati, et al, 2020).…”

“…One type of semiconductor material that is often used today is SnO2. SnO2 is a semiconductor material with an energy band gap of about 3.6 eV and is sensitive to the presence of gas (Susilawati, et al, 2020). Based on these properties, SnO2 is widely applied to gas sensors (Rebholz, et al, 2015), optoelectronic equipment (Ikraman, et al, 2017), solar cells (Bittau, et al, 2017), capacitors , liquid crystal displays (Andrade, et al, 2019), diode (Gullu, et al, 2020), and transistor (Liu, et al, 2020).…”

“…(Hegazya, et al, 2019). In addition, SnO2 can be doped with a mixture of antimony and zinc (Medhi, et al, 2019), a mixture of aluminum and zinc (Hegazya et al, 2019), a mixture of aluminum and indium (Munandar, et al, 2020), a mixture of aluminum and fluorine (Susilawati, et al, 2020). al, 2019), and a mixture of aluminum, fluorine, and indium (Doyan, et al, 2020).…”

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

“…The first stage, synthesis, is the process of making a thin layer using the sol-gel spin coating technique with a SnO2: (Al + F + In) ratio of 95: 5% and 75: 25%. The synthesis consists of glass substrate preparation, sol-gel preparation, coating preparation, and curing [15]. Substrate preparation is done by cleaning the glass with detergent to remove all the dirt on the glass.…”

Synthesis of Tin Oxide Thin Layer by Doping Aluminum, Fluorine, and Indium Using Sol-Gel Spin Coating Technique

“…SnO2 is usually doped with aluminum (Imawanti et al, 2017), fluorine (Kendall et al, 2020), and indium (Hakim et al, 2019), zinc (Hegazy et al, 2019, and antimony (Khorshidi et al, 2019) . Also, SnO2 can be doped with a mixture of aluminum and zinc (Doyan et al, 2018), a mixture of antimony and zinc (Medhi et al, 2019), a mixture of aluminum and fluorine (Susilawati et al, 2020), and a mixture of aluminum and indium (Munandar et al, 2020).…”