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1976
DOI: 10.1107/s0021889876011709
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The thermal expansion of 2H-MoS2, 2H-MoSe2and 2H-WSe2between 20 and 800°C

Abstract: The hexagonal cell dimensions a and c of 2H‐MoS2, 2H‐MoSe2 and 2H‐WSe2 have been measured over the temperature range 20 to 800 °C. In all three compounds a and c increased non‐linearly with temperature, the linear thermal expansion coefficient of c being greater than that of a. Above 500°C the compounds begin to decompose in vacuum.

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Cited by 153 publications
(112 citation statements)
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“…The redshift indicates a temperature-induced reduction of the band gap due to thermal expansion of the crystal lattice. The fact that the redshift is far less pronounced in the CVD-grown sample shows that the CVD-grown MoS 2 film strongly adheres to the SiO 2 substrate, which has a very small thermal expansion coefficient (α SiO 2 = 0.24 × 10 [28]. A very similar reduction of the spectral shift with temperature was observed in oxide-covered MoS 2 flakes on SiO 2 substrates [26].…”
Section: Photoluminescencementioning
confidence: 66%
“…The redshift indicates a temperature-induced reduction of the band gap due to thermal expansion of the crystal lattice. The fact that the redshift is far less pronounced in the CVD-grown sample shows that the CVD-grown MoS 2 film strongly adheres to the SiO 2 substrate, which has a very small thermal expansion coefficient (α SiO 2 = 0.24 × 10 [28]. A very similar reduction of the spectral shift with temperature was observed in oxide-covered MoS 2 flakes on SiO 2 substrates [26].…”
Section: Photoluminescencementioning
confidence: 66%
“…Alternatively, one can understand the red shift of the exciton mode as a strain-induced effect owing to the hot temperatures in the furnace at which CVD growth takes place, while ML samples prepared by exfoliation at RT have very similar emission energies to one another. Since CVD ML are formed on the hot surface out of the vapor phase at elevated temperatures, the consecutive cooling after growth leads to tensions caused by the mismatch of the thermal expansion coefficients (TECs) of WSe 2 (in plane coefficient) TEC = (1.1 × 10 [69,70] and sapphire TEC = (5 × 10 −6 /K-8.3 × 10 −6 /K) [71] at the relevant temper atures (300-900 K), which differ by a factor of 1.5-2. Qualitatively, the TEC of sapphire is less than that of WSe 2 over this temperature range.…”
Section: Resultsmentioning
confidence: 99%
“…In Fig. 4 we plot the a lattice constant assembling published data in the literature [35][36][37][38] in order to span the temperature range of interest for MoS 2 , MoSe 2 , and sapphire. The solid lines are secondorder polynomial fits which we use to calculate the strain versus temperature.…”
Section: B the Influence Of Strainmentioning
confidence: 99%
“…Strain modifies the ratio of the effective masses in the valence and the conduction bands giving rise to an intercellular [35][36][37][38]. Note that for the low temperature MoS 2 data, scatter was reduced by taking points corresponding to the linear fit to the data in Ref.…”
Section: B the Influence Of Strainmentioning
confidence: 99%