The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

Hansen, Henrik Steen; Bensaoula, A.; Tougaard, S.; Ignatiev, A.

doi:10.1016/0022-0248(92)90633-t

Cited by 19 publications

(3 citation statements)

References 30 publications

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“…[2][3][4] This in turn calls for a detailed picture of the interface formation which, up to now, has only been obtained for interfaces between different arsenides, especially AlAs/GaAs and InAs/GaAs. [5][6][7][8][9][10][11][12][13][14] Indeed, in this case, it is now well established that the interface abruptness is limited by segregation during growth rather than by interdiffusion processes. This has been described successfully by several models based either on an exchange mechanism 7,15 or on diffusion length differences 16,17 at the growth surface.…”

Section: Introductionmentioning

confidence: 97%

X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs

Dehaese

Wallart

Schuler

et al. 1998

Journal of Applied Physics

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We have studied by angle resolved x-ray photoemission spectroscopy ͑XPS͒ the interface between Ga 0.5 In 0.5 P and GaAs grown by gas source molecular beam epitaxy. For cations, we show that the interface is abrupt for a growth temperature of 400°C and that indium segregation is effective at 500°C but less than that in GaInAs at the same temperature. For anions, growth of the two layers in rapid succession results in the incorporation of an excess of arsenic in the GaInP epilayers and a diffuse interface. As soon as these predominant experimental effects are suppressed, the abruptness of the interface is limited by a weak arsenic surface segregation. For this quasi-abrupt interface, we report a valence band offset of Ϸ0.3 eV as determined by XPS.

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Section: Introductionmentioning

confidence: 97%

X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs

Dehaese

Wallart

Schuler

et al. 1998

Journal of Applied Physics

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“…A procedure called 'flash-off' of surface indium atoms after InGaAs QW growth is often adopted to obtain sharp interfaces. A variety of in situ [6][7][8][9] and ex situ [10,11] characterization methods have been used to evaluate the compositional abruptness of the interface. In each case, significant broadening of the interface has been observed and has been attributed to the surface segregation of indium atoms.…”

Section: Introductionmentioning

confidence: 99%

Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

Mishra¹,

Ramesh²,

Srinivasan³

et al. 2005

Semicond. Sci. Technol.

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We present a detailed study on the influence of several growth related factors such as indium segregation, spacer layer thickness and Si δ doping on the structural, optical and electrical properties of molecular beam epitaxy grown pseudomorphic high electron mobility transistor (P-HEMT) structures. Simulation of a high resolution x-ray diffraction (HRXRD) rocking curve was performed and compared with the experimental data to determine the quantum well (QW) thickness and composition as well as the indium segregation related changes in the QW composition. It is shown that growth of a thin layer (6 Å) of GaAs on top of the pseudomorphic InGaAs layer followed by 'flash-off' at a higher temperature could minimize the indium segregation related degradation of the hetero interface. Photoluminescence (PL) and surface photo voltage (SPV) peaks corresponding to the sub-band transitions are analysed using a self-consistent solution of Schrödinger and Poisson equations. PL results showed the dependence of the transition energies on the spacer layer thickness and the effectiveness of the carrier transfer into the InGaAs well. SPV spectra showed characteristic peaks from all the layers in the HEMT structures and were correlated with the data obtained from PL and HRXRD.

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“…A more 'square-like' bottom (In-GaAs on GaAs) interface can be obtained by predeposition of a thin indium layer just before the InGaAs growth, while a more 'square-like' top (AlGaAs on InGaAs) interface can be performed by 'flash off' of the surface indium population just after the InGaAs growth. A variety of in situ techniques such as Auger electron spectroscopy [8], x-ray photoemission spectroscopy [9], secondary-ion mass spectroscopy [10], and reflection high-energy electron diffraction [11], as well as ex situ techniques including photoluminescence (PL) [12,13] and high-resolution electron micrography [14], have been employed to evaluate the compositional abruptness of the InGaAs-(Al)GaAs interface. In each case, a significant compositional broadening of the interface was observed and attributed to the surface segregation of indium atoms during growth.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Lin

Huang

Tiong

et al. 1999

Semicond. Sci. Technol.

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We have studied the effects of the two-dimensional electron gas (2DEG) and indium surface segregation in four pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures using room-temperature phototransmittance (PT) and photoluminescence (PL) measurements. The PT spectra from the InGaAs modulation-doped quantum well channel can be accounted for by a lineshape function which is the first-derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the concentration of 2DEG in addition to the energies of the intersubband transitions. The lowest-lying intersubband transition has been confirmed by a comparison of the PT and PL spectra. From the difference of intersubband transition energies, the surface segregation effects of indium atoms are demonstrated.

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The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

Cited by 19 publications

References 30 publications

X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs

X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs

Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

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