The temperature dependent part of the impurity resistivity in aluminium alloys with germanium

Kontoleon, N.; Papathanasopoulos, K.; Chountas, K.; Papastaikoudis, C.

doi:10.1088/0305-4608/4/12/005

Cited by 15 publications

(2 citation statements)

References 21 publications

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“…The residual resistivity per atomic per cent was ρ/c = 1.14 µ /at.%, which is in very good agreement with previous measurements [10,11]. The experimental setup for the measurements of the electrical resistance has been described previously [12]. The main errors in the values of the restivities can be attributed to the inaccuracy in the determination of the geometrical factor (±0.5%).…”

Section: Methodssupporting

confidence: 89%

Deviations from Matthiessen's rule for dilute Cu(Al) alloys

Αποστολόπουλος

Papastaikoudis

1996

J. Phys.: Condens. Matter

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The electrical resistivity of a series of dilute polycrystalline Cu(Al) alloys has been investigated in the temperature range 4.2 - 300 K. The phonon part of the resistivity at low temperature varies as where 4 < n < 5. The temperature corresponding to the maxima of the deviations from Matthiessen's rule obeys the Kagan - Zhernov law, i.e. . At high temperatures the slope of depends on the impurity concentration and changes sign from negative to positive.

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Section: Methodssupporting

confidence: 89%

Deviations from Matthiessen's rule for dilute Cu(Al) alloys

Αποστολόπουλος

Papastaikoudis

1996

J. Phys.: Condens. Matter

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“…However, the electronic properties of the TiN film depend on substrate temperature due to electronphonon scattering. 36 Therefore, to make a correct comparison between the electronic properties of the films deposited at different temperatures, these properties should be determined at the same substrate temperature. To do so, the temperature coefficient of the electronic properties was determined and used to correct the in situ data obtained at the specific deposition temperature to room temperature.…”

Section: Electronic Properties Of Tin Filmsmentioning

confidence: 99%

In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition

Langereis

Heil

Sanden

et al. 2006

Journal of Applied Physics

103

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The growth of ultrathin TiN films by plasma-assisted atomic layer deposition (PA-ALD) was studied by in situ spectroscopic ellipsometry (SE). In between the growth cycles consisting of TiCl4 precursor dosing and H2–N2 plasma exposure, ellipsometry data were acquired in the photon energy range of 0.75–5.0eV. The dielectric function of the TiN films was modeled by a Drude-Lorentz oscillator parametrization, and the film thickness and the TiN material properties, such as conduction electron density, electron mean free path, electrical resistivity, and mass density, were determined. Ex situ analysis was used to validate the results obtained by in situ SE. From the in situ spectroscopic ellipsometry data several aspects related to thin film growth by ALD were addressed. A decrease in film resistivity with deposition temperature between 100 and 400°C was attributed to the increase in electron mean free path due to a lower level of impurities incorporated into the films at higher temperatures. A change in resistivity and electron mean free path was observed as a function of film thickness (2–65nm) and was related to an increase in electron-sidewall scattering for decreasing film thickness. The TiN film nucleation was studied on thermal oxide covered c-Si substrates. A difference in nucleation delay was observed on these substrates and was related to the varying surface hydroxyl density. For PA-ALD on H-terminated c-Si substrates, the formation of an interfacial SiNx film was observed, which facilitated the TiN film nucleation.

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Table 1: host metal Ag - Fe

Bass¹

Landolt-Börnstein - Group III Condensed Matter

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The temperature dependent part of the impurity resistivity in aluminium alloys with germanium

Cited by 15 publications

References 21 publications

Deviations from Matthiessen's rule for dilute Cu(Al) alloys

Deviations from Matthiessen's rule for dilute Cu(Al) alloys

In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition

Table 1: host metal Ag - Fe

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