The temperature dependent negative dielectric constant phenomena of Au/n–GaAs structure with CZO interfacial layer

Kınacı, Barış

doi:10.1007/s10854-021-05313-x

Cited by 6 publications

(1 citation statement)

References 35 publications

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“…In the presence of an insulating or organic interface layer, a capacitance (C) is formed between the metal and the semiconductor. The relationship of this capacitance and the capacitance of the interface layer (C ox ) and the capacitance of the semiconductor (C sc ) is given as follows [17,18]:…”

Section: Resultsmentioning

confidence: 99%

The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range

Sevgili¹

2021

Turk J Phys

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The Al/Mg 2 Si/p-Si Schottky diode was fabricated using spin coating. The real ( ε ′ ) and imaginary ( ε ′ ′ ) components of complex dielectric ( ε *), the real (M ′ ) and imaginary (M ′ ′ ) components of complex electric modulus (M*) and AC electrical conductivity ( σ AC ) of the fabricated Al/Mg 2 Si/p-Si Schottky diode (SD) were examined by using the impedance spectroscopy (IS) measurements in a wide frequency range of 1 kHz-1 MHz. The ε ′ and ε ′ ′ were obtained using the value of measured capacitance and conductance while the values of dielectric loss tangent (tan δ , M ′ , M ′ ′ and σ AC were obtained using the value of ε ′ and ε ′ ′ . While the values of ε ′ , ε ′ ′ and tan δ are almost independent of the frequency in the inversion and accumulation region, their value changes with the frequency, especially in the depletion region. The σAC was examined depending on the frequency and it was seen that its value increased with increasing frequency especially in depletion and accumulation region. The experimental results showed that the Mg 2 Si can be used instead of conventionally used dielectric materials (SnO 2 , SiO 2 ).

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Section: Resultsmentioning

confidence: 99%