The synthesis of composites and solid solutions of α-SiCAlN by field-activated combustion

Formation Mechanism of AlN–SiC Solid Solution by Combustion Nitridation in Si3N4–Si‐Al‐C System

“…4). These results demonstrate that a solid solution can be synthesized from Si 3 N 4 , aluminum, and carbon as reactants without the need for electric-field activation 19,20 but with the presence of nitrogen gas at low pressures. When the ratio of Al/Si 3 N 4 in the reactants is maintained at 8, but the intended ratio of AlN/SiC in the product is deceased to 4/3, the reaction requires additional carbon and silicon to be stoichiometric; i.e.,…”

Combustion synthesis in nanostructured reactive systems

“…[37]). SHS with an additional electrical field: This method proposed by 416 Yamada et al [47] was used for the synthesis of different SiC-417 based ceramics (see also [48][49][50]). 418 Chemically activated SHS: This method was pioneered by 419 Nersisyan et al [51] wherein chemical additives like 420 polytetrafluoroethylene (PTFE), which allows gas-phase reac-421 tion routes, are added as activation agents for Si + C reaction.…”

Reactive Synthesis and Phase Stability Investigations in the Aluminum Nitride–Silicon Carbide System

“…19,20 As indicated earlier, depending on the magnitude of the applied field (above a threshold), the products are either a composite of AlN-rich and SiC-rich phases or a solid solution. The composition of the two phases in the composites depended on the value of the applied field, as indicated above and in more detail in the cited references.…”

“…Two compositions were investigated: a solid solution (synthesized with a field of 30.0 V⅐cm Ϫ1 ) and a composite of AlN-rich and SiC-rich 2H-phases (synthesized with a field of 12.5 V⅐cm Ϫ1 ). As is indicated in detail in a previous publication, 19 under the influence of the latter field, the reaction was not complete and the product contained Si and C. Each set of uncompacted powder samples was heated at a rate of 6°C⅐min Ϫ1 up to 1700°C and held there for 2 h. The lower heating rate minimized the problems of the excessive background pressure. The products of this treatment for both sets of samples were found to contain ␤-SiC only, as can be seen from Fig.…”