The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters

Hayashi, S.; Sandhu, Rajinder; Goorsky, Mark S.

doi:10.1149/1.2435708

Cited by 17 publications

(22 citation statements)

References 11 publications

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“…Our previous efforts for InP showed that a ~0.8 μm layer transfer was adequate for subsequent chemical mechanical polishing and resulted in the transfer of a high quality template layer for subsequent fabrication. (5)(6)(7) For the case of GaN, layer transfer in the range of 0.75 -1.3 μm would promote many different applications.…”

Section: Introductionmentioning

confidence: 99%

The Role of the Nucleation Annealing Temperature Annealing on the Exfoliation of Hydrogen-Implanted GaN

Padilla¹,

Jackson²,

Goorsky³

2010

ECS Trans.

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Exfoliation of ~1 µm thick GaN layers from bulk GaN or GaN / sapphire templates was achieved and is based on a study of the introduction and evolution of strain-related defects produced during hydrogen implantation. Hydrogen-implanted GaN at 77K produces two distinct strain-related regions. Analysis and modeling of the strain distribution via triple axis diffraction and SRIM calculations showed that one region is near the surface and the second at the projected range. After annealing at temperatures from 150 °C to 450 °C for extended times (1-40 hours), the near-surface strain reduces for all annealing conditions, whereas the strain in the peak from near the projected range decreased monotonically as the annealing temperatures increased to 300 °C but showed a reversal, i.e., a reduction in the strain at higher temperatures. This led to a two step exfoliation process with the low temperature step performed at either 150 °C or 375 °C for 20 hours followed by high temperature annealing ( > 650 °C). The first combination produced a series of small (< 1 µm) blisters whereas the 375 °C first step combination produced several µm-sized exfoliated sections (with removal of 1 µm thick layers). This sequence promoted the transfer of a thicker layer using a lower dose than had been reported previously.

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Section: Introductionmentioning

confidence: 99%

The Role of the Nucleation Annealing Temperature Annealing on the Exfoliation of Hydrogen-Implanted GaN

Padilla¹,

Jackson²,

Goorsky³

2010

ECS Trans.

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“…Moreover, they later showed layer transfer of InP onto GaAs using the abovementioned implantation parameters. 53 It was found that layer transfer at 150°C gave smoother InP surfaces [root-mean-square (rms) roughness 2.8 nm] compared with layer transfer at 300°C (rms roughness 8.5 nm).…”

Section: Gaasmentioning

confidence: 99%

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Singh

Christiansen

Moutanabbir

et al. 2010

Journal of Elec Materi

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Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many parameters such as the semiconductor material, ion fluence, ion energy, and implantation temperature. The optimum values of these parameters for compound semiconductors are presented. The blistering and splitting processes in silicon have been studied in detail, motivated by the fabrication of the widely used silicon-on-insulator wafers. Hence, a comparison of the blistering process in Si and compound semiconductors is also presented. This comparative study is technologically relevant since ion implantation-induced layer splitting combined with direct wafer bonding in principle allows the transfer of any type of semiconductor layer onto any foreign substrate of choice-the technique is known as the ion-cut or Smart-Cut (TM) method. For the aforementioned compound semiconductors, investigations regarding layer transfer using the ion-cut method are still in their infancy. We report feasibility studies of layer transfer by the ion-cut method for some of the most important and widely used compound semiconductors. The importance of characteristic values for successful wafer bonding such as wafer bow and surface flatness as well as roughness are discussed, and difficulties in achieving some of these values are pointed out

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“…In the case of ion-cutting (or Smart CutTM) process based on wafer bonding and hydrogeninduced layer exfoliation, it is common to transfer III-V layers onto Si. The transferred structure is then used as a template for subsequent epitaxial re-growth of device structures [3][4][5]. Due to the rough as-transferred surface and considerable implantation-induced radiation damage near the surface region of transferred structure, a chemical mechanical polishing (CMP) process and/or other surface treatments are required before re-growth.…”

Section: Introductionmentioning

confidence: 99%

Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

Chen

Wong

Lau

et al. 2009

2009 14th OptoElectronics and Communications Conference

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The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters

Cited by 17 publications

References 11 publications

The Role of the Nucleation Annealing Temperature Annealing on the Exfoliation of Hydrogen-Implanted GaN

The Role of the Nucleation Annealing Temperature Annealing on the Exfoliation of Hydrogen-Implanted GaN

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

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