Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

Chen, Peng; Wong, Ka Ming; Lau, Kei May; Lau, S. S.

doi:10.1109/oecc.2009.5214562

2009 14th OptoElectronics and Communications Conference 2009

DOI: 10.1109/oecc.2009.5214562

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Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

Peng Chen

Ka Ming Wong

Kei May Lau

et al.

Abstract: Functioning InP/InGaAs/InP p-i-n photodiodes, initially grown on an InP substrate, were transferred onto a SiO 2 /Si substrate using the combination of ion-cutting and selective chemical etching. Effects of hydrogeninduced defects on transferred devices are discussed.

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Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

Abstract: Functioning InP/InGaAs/InP p-i-n photodiodes, initially grown on an InP substrate, were transferred onto a SiO 2 /Si substrate using the combination of ion-cutting and selective chemical etching. Effects of hydrogeninduced defects on transferred devices are discussed.

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References 7 publications

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