The subthreshold behavior of SOS MOST's

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

“…186,187 and Darwish et al 188 that the subthreshold drain current characteristics of MOS-SOS devices differed from their bulk counterpart. 186,187 and Darwish et al 188 that the subthreshold drain current characteristics of MOS-SOS devices differed from their bulk counterpart.…”

“…186,187 and Darwish et al 188 that the subthreshold drain current characteristics of MOS-SOS devices differed from their bulk counterpart. Darwish et al 188 measured the subthreshold characteristics of MOS-SOS devices and verified that they are independent of thickness when X s is greater than X d . If the depletion region does reach the silicon-sapphire interface, however, the characteristics will be degraded due to the interface states.…”

Dynamic self-biasing of the floating substrate of the sos transistor

“…3) The subthreshold transconductance is found to be smaller on SOS MOSTs than on corresponding bulk devices due to a clamping of the electrical potential at the Si/sapphire interface [4]. For the ideal SOS MOST, however, the contrary is theoretically found [5].…”

“…Under dynamic operation, charges of this kind could lead to an even further increase of the threshold voltage. 4. Implications of dynamic self-biasing on SOS circuit performance.…”

“…There are two components to this current : the reverse current of the drain junction Ir and the weakinversion (subthreshold) channel current Isth [4,8]. The latter is given by :…”