The study of the interaction of indium with tellurium in silicon

Tessema, Genene; Vianden, R.

doi:10.1007/s00339-005-3249-6

Cited by 8 publications

(6 citation statements)

References 29 publications

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“…In the past, PAC spectroscopy has been utilized to observe the dopant-defect/dopant interaction in various semiconductors, e.g., using 111 In/Cd probe atoms, In-defect/dopant pairs have been observed in Ge 11,12 and Si. [8][9][10][17][18][19]44 Recently, we have observed such pairs with 100 Pd/Rh probe atoms in highly doped Si, i.e., Pd-vacancy defect pair in highly doped n-Si 41 and Pd-B defect pair in highly doped p-Si. 42 The corresponding PAC spectra are shown in Fig.…”

Section: Dopant-defect/dopant Interactionmentioning

confidence: 93%

“…This sensitivity is advantageous for discriminating the presence of intrinsic and extrinsic defects in semiconductors, which is in general a basic problem in defect studies. Extensive PAC data are available on such measurements in semiconductors, [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] which can be summarized as follows:…”

Section: Hyperfine Interactionsmentioning

confidence: 99%

“…On the basis of unique and distinct EFG, indiumdopant pairs in silicon, [8][9][10] and indium-vacancy, indium-interstitial, and indium-carbon pairs in germanium 11,12 were identified using PAC technique with 111 In probe atoms. The formation of similar defect complexes was also observed in II-VI semiconductors CdTe, ZnTe, ZnSe, and Hg 1Àx Cd x Te.…”

Section: Hyperfine Interactionsmentioning

confidence: 99%

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The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors

Dogra¹,

Byrne

Ridgway

2009

Journal of Elec Materi

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Several experimental techniques are available to investigate materials but microscopic techniques based on hyperfine interaction form a subclass that can characterize materials at the smallest possible atomic scale. The interaction of the nuclear electromagnetic moments with the hyperfine fields arising from the extranuclear electronic charges and spin distributions forms the basis of hyperfine methods. In this review article, one of the hyperfine methods, known as perturbed angular correlation (PAC), has been described as it provides local-scale fingerprints about the formation, identification, and lattice environment of defects and/or defect complexes in semiconductors at the PAC probe site. In particular, the potential of the PAC technique has been demonstrated in terms of measured electric field gradient, its orientation, and the symmetry at the probe site for a variety of defects in semiconductors such as Si, InP, GaAs, InAs, ZnO, GaP, and InN.

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Section: Dopant-defect/dopant Interactionmentioning

confidence: 93%

Section: Hyperfine Interactionsmentioning

confidence: 99%

Section: Hyperfine Interactionsmentioning

confidence: 99%

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The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors

Dogra¹,

Byrne

Ridgway

2009

Journal of Elec Materi

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“…The In-As pair in germanium, which is discussed here, is representative of the formation and properties of most intentionally doped substitutional impurity complexes in silicon and germanium [8][9][10][11][12][13][14][15][16].…”

Section: Formation and Properties Of The Acceptor-donor Complexes In ...mentioning

confidence: 99%

Effects of external stress on defect complexes in semiconductors

Tessema

2007

J. Phys.: Condens. Matter

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Crystal field gradients that exist at lattice sites in solids depend on the symmetry of charge distribution around atomic sites. The charge symmetry could be broken either by the presence of impurity complexes in the host matrix or by external stress on the samples, which leads to an observable magnitude of electric field gradients (EFGs). The perturbed γ-γ angular correlation (PAC) method is employed here to investigate the effect of uniaxial stress on (111)Cd sites in crystalline doped semiconductors.

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“…For example, orientations of most PAC probe/acceptor pairs in Si, Ge, and several III-V semiconductors are oriented along the <111> directions [11]; although, the orientation of the In-Te pair and of one of the In-Fe complexes in Si deviate [85,86]. As another example, the indiumoxygen vacancy pair and the collinear arrangement of indium with two oxygen vacancies in CeO 2 also resulted in the main principal axis of the EFG along the <111> crystal direction [87].…”

mentioning

confidence: 99%

Perturbed Angular Correlation Spectroscopy – A Tool for the Study of Defects and Diffusion at the Atomic Scale

Zacate

Jaeger

2011

DDF

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Abstract. This paper provides an introduction to perturbed angular correlation (PAC) spectroscopy in the context of its application in the study of point defects and diffusion. It emphasizes what we anticipate to be of interest to non-PAC specialists who are interested in understanding variations in how PAC results are presented by different research groups and in how physical quantities such as defect formation energies, association energies, and migration barriers can be extracted from analysis of PAC spectra. Numerous citations are included to emphasize the universality of the analysis methods across different classes of materials including metallic, ceramic, and semiconducting compounds.

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The study of the interaction of indium with tellurium in silicon

Cited by 8 publications

References 29 publications

The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors

The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors

Effects of external stress on defect complexes in semiconductors

Perturbed Angular Correlation Spectroscopy – A Tool for the Study of Defects and Diffusion at the Atomic Scale

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