The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes

Rabinovich, Oleg; Sushkov, V. P.

doi:10.1134/s1063782609040228

Cited by 9 publications

(4 citation statements)

References 2 publications

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“…SimWindows software (SW) was used in current investigation [6]. Main features of the software and method of its usage for semiconductor devices simulation have been described in [2][3][4][5][6][7].…”

Section: Methodsmentioning

confidence: 99%

“…Our investigations based on computer simulation showed that, based on such heterostructures not only photodiodes can be produced but also phototransistors (PT) with a sensitivity of more than 100 A/cm 2 , in this wavelengths area [2][3][4][5][6][7]. It has been proposed ultraviolet phototransistor (UV PT) structure, based on the capabilities of this technology with GaN and AlGaN collector.…”

Section: Introductionmentioning

confidence: 99%

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AlGaN Heterostructure Optimization for Photodetectors

Didenko¹,

Rabinovich²,

Legotin³

et al. 2016

J. Nano- Electron. Phys.

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GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-in structures for solar blind applications. However, it seems that bipolar phototransistors with their additional functionality could also be of potential interest. In this work we present the results of phototransistors parameters simulation using the software-Sim Windows. The structure analyzed consisted, counting from the substrate, of n-AlxGa1-xN collector, p-GaN base and n-AlxGa1-xN emitter. The Al mole fraction in the collector and emitter was varied from x  0.2 to x  0.3. The collector and emitter thickness was taken as 0.9 m. The doping level in the emitter and collector was varied from 10 17 to 10 19 cm-3. The p-GaN base thickness was taken as 0.3 m, with doping of 10 17-10 18 cm-3. The electron and hole lifetimes in the base were taken as 12 ns.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

AlGaN Heterostructure Optimization for Photodetectors

Didenko¹,

Rabinovich²,

Legotin³

et al. 2016

J. Nano- Electron. Phys.

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“…Our investigations based on computer simulation showed that, based on such NH, not only photodiodes but also phototransistors (PT) with a sensitivity of more than 100 A/cm 2 can be produced, in this wavelengths area [35][36][37][38][39][40][41][42][43]. Ultraviolet phototransistor (UV PT) structure has been proposed, based on the capabilities of this technology with GaN and AlGaN collector.…”

Section: Photodetector (Phototransistor) Improvementsmentioning

confidence: 99%

LED and Phototransistor Simulation

Yurchuk¹,

Rabinovich²,

Didenko³

2017

Optoelectronics - Advanced Device Structures

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Optoelectronics (e.g., light-emitting diodes, photodetectors) is one of the most widely used fields nowadays. But it is still necessary to improve their characteristics for using in general lighting. In this chapter, the heterostructure conductivity type, impurity and indium atoms influence on the LEDs and phototransistor characteristics are investigated by computer simulation. It was found that current-voltage characteristic and quantum efficiency depend on impurity and indium atoms change a lot. By varying impurity and indium atom concentration, controlling their distribution in InGaN and AlGaP heterostructure LEDs and photodetector characteristics can be improved.

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“…This investigation was based on experimental data, on some new and previous simulation results [1][2][3] . Distinctive features of this program are as follows: the electrical, optical and thermal properties of devices that are provided via simulation based on exact physical systems; the possibility of simulating different types of double contact devices (LEDs, photodiodes, lasers, etc.)…”

Section: Introductionmentioning

confidence: 99%

Nitride heterostructure influence on efficiency droop

2015

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The influence of nitride heterostructures on efficiency droop is presented. It was developed a special method based on simulation for investigating the changes in the semiconductor devices characteristics due to different influencing factors. The cause of efficiency droop was detected -large difference in carrier lifetimes. The simulation results are used to suggest several ways for improving LED efficiency about 12 %.

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The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes

Cited by 9 publications

References 2 publications

AlGaN Heterostructure Optimization for Photodetectors

AlGaN Heterostructure Optimization for Photodetectors

LED and Phototransistor Simulation

Nitride heterostructure influence on efficiency droop

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