Nitride heterostructure influence on efficiency droop

Rabinovich, Oleg; Didenko, S.; Legotin, Sergei

doi:10.1117/12.2078317

Cited by 2 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…based on different materials: Si, Ge, A III B V , A II B VI and etc. ; 3) the device simulation possibility with the structures containing plenty of layers including layers with quantum-mechanical properties (single and multiple quantum wells) [1][2][3][4][5]. The program has an exclusive flexibility at optoelectronic semiconductor device simulation.…”

Section: Introductionmentioning

confidence: 99%

InAlGaP Heterostructures and LEDs optimization

Didenko¹,

Rabinovich²,

Legotin³

et al. 2016

MSF

View full text Add to dashboard Cite

Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a heterostructure having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel. Good correlation in simulation and experimental results has been obtained. It was determined that the best AlGaInP heterostructure contains 5 wide QW (width 10 nm each) in active region. The main thing is that in central ones there is maximum radiation and at the both ends of active region are “barriers” which help to concentrate electrons/holes in active region and additionally “protect” QW from different defects.

show abstract

Section: Introductionmentioning

confidence: 99%

InAlGaP Heterostructures and LEDs optimization

Didenko¹,

Rabinovich²,

Legotin³

et al. 2016

MSF

View full text Add to dashboard Cite

show abstract

LED and Phototransistor Simulation

Yurchuk¹,

Rabinovich²,

Didenko³

2017

Optoelectronics - Advanced Device Structures

Self Cite

View full text Add to dashboard Cite

Optoelectronics (e.g., light-emitting diodes, photodetectors) is one of the most widely used fields nowadays. But it is still necessary to improve their characteristics for using in general lighting. In this chapter, the heterostructure conductivity type, impurity and indium atoms influence on the LEDs and phototransistor characteristics are investigated by computer simulation. It was found that current-voltage characteristic and quantum efficiency depend on impurity and indium atoms change a lot. By varying impurity and indium atom concentration, controlling their distribution in InGaN and AlGaP heterostructure LEDs and photodetector characteristics can be improved.

show abstract

Nitride heterostructure influence on efficiency droop

Cited by 2 publications

References 1 publication

InAlGaP Heterostructures and LEDs optimization

InAlGaP Heterostructures and LEDs optimization

LED and Phototransistor Simulation

Contact Info

Product

Resources

About