The Study of Nanolithography Processing on the Photoresistor Thin Film by Atomic Force Microscopy

Abstract

In this paper, the nanomachining experiments on the SPR3001 photoresistor thin films were processing by contact mode atomic force microscopy (AFM). After the experiment, it can be found, in the nanomachining, the greater the indented distance along the Z-axis depth, carved out of the groove depth and groove width of nanoline is greater. The influences of cutting directions on line width and cutting depth during nanomachining were quite a few and the cutting situation was stable by lateral nanomachining. This article also successfully processed the regular hexagonal nanopattern, also proves the nanomachining ability of the AFM probe is good at nanoscale patterned on photoresistor thin films.