The Study of Dissolved Oxygen Control in TSV Electroplating Deposition Process

Abstract

The effects of various parameters in copper electroplating electrolyte on the filling characteristics of through silicon via(TSVs). Among the various parameters, the concentration of dissolved oxygen was found to be susceptible to bottom-up filling rate. The concentration of dissolved oxygen was effectively lowered by installing the hardware named 'degasser' at the circulation line. The installation of 'degasser' enabled the maintenance of stable bottom-up filling rates for the defect-free filling of TSVs.