The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

Abstract

The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code) simulation for non-irradiated and 3 MeV proton-irradiated samples at a fluence of 5 × 1012 p/cm2. Compared with non-irradiated samples, a new electron trap at EC-0.37 eV was measured by DLTS in post-irradiated samples and was found to be closer to the center of the forbidden band. The trap concentration in bulk, the interface trap charge density and the electron capture cross-section were 4 × 1015 cm−3, 1.8 × 1012 cm−2, and 9.61 × 10−15 cm2, respectively. The deep level trap, acting as a recombination center, resulted in a large recombination current at a lower forward bias and made the forward current increase in InP/InGaAs heterostructures for post-irradiated samples. When the deep level trap parameters were added into the technology computer-aided design (TCAD) simulation tool, the simulation results matched the current–voltage measurements data well, which verifies the validity of the damage mechanism of proton irradiation.

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

“…As with the previous analysis in Ref. [8], the interaction of protons with material atoms in InP HBT generates acceptor traps of In vacancies, which act as recombination centres. These traps could reduce the lifetime of minority carriers and increase the recombination rate in devices.…”

“…Indium phosphide hetero-junction bipolar transistors (InP HBTs) are extensively used in aerospace systems, military communications and satellites owing to their exceptional material properties and high-frequency characteristics within various millimetre-wave devices [1][2][3]. However, in the harsh irradiation environment of space, InP HBTs are susceptible to single-event transients (SETs) triggered by heavy ions [4][5][6] and displacement damage induced by high-flux protons [7,8]. While our previous work has covered research on the single-event effect [9], this paper will concentrate on displacement damage.…”

Doping Compensation Enables High‐Detectivity Infrared Organic Photodiodes for Image Sensing

“…Such low trap density and high optoelectronic conversion efficiency are rarely achievable even with the state-of-the-art amorphous silicon or inorganic compound semiconductors. [48,49] Technically, the large dynamic range and detectivity in nW cm −2 range at room temperature provides great application potential for infrared photodetection and imaging, especially at 1.06 µm at which silicon-based cameras fail to address, and InGaAs-based cameras need to be cooled down to significantly low temperature, which is not suitable for battery-powered portable applications.…”

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

“…The sign of each peak indicates whether the observed defect acts as a trap for minority or majority carriers, while the measured capacitance is proportional to defect concentration. DLTS-based methods are very efficient in defect determination in different semiconductor materials and devices, such as diodes [85,86], Schottky diodes [68,69] and rectifiers [87,88], solar cells [5,89,90], bipolar [91] and HEMT transistors [92] or laser structures [93,94]. A digital modification of DLTS, the deep level transient Fourier spectroscopy (DLTSFS) method measures the complete capacitance transient as a C(t) array and transfers the data into a computer system.…”