The study of charge carrier kinetics in semiconductors by microwave conductivity measurements

Kunst, M.; Beck, G.

doi:10.1063/1.337612

Cited by 307 publications

(142 citation statements)

References 17 publications

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“…The charge-carrier lifetimes in bare and POM loaded TiO 2 and WO 3 samples, after UV irradiation, have been determined by microwave absorption experiments using the Time Resolved Microwave Conductivity method (TRMC). 42 TRMC measurements were carried out as previously described. 43 The incident microwaves were generated by a Gunn diode in the K a band (29)(30)(31).…”

Section: Characterization Of the Solidsmentioning

confidence: 99%

Keggin heteropolyacid H3PW12O40 supported on different oxides for catalytic and catalytic photo-assisted propene hydration

Marcı̀

García‐López

Bellardita

et al. 2013

Phys. Chem. Chem. Phys.

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Catalytic and catalytic photo-assisted hydration of propene to form 2-propanol in gas-solid regime at atmospheric pressure and 85 1C were carried out by using a heteropolyacid (POM) supported on different oxides. Binary materials were prepared by impregnation of H 3 PW 12 O 40 on different commercial and home prepared supports (TiO 2 , SiO 2 , WO 3 , ZrO 2 , ZnO, Al 2 O 3 ). Some of the composites were active both for catalytic and catalytic photo-assisted reactions. The Keggin type POM was completely and partially degraded, when supported on ZnO and Al 2 O 3 , respectively, and these binary solids always resulted as inactive for both catalytic and catalytic photo-assisted reactions. The supported Keggin POM species played a key role both for the catalytic and the photo-assisted catalytic reactions, due to their strong acidity and ability to form strong oxidant species under UV irradiation, respectively. The contemporary presence of heat and UV light improved the activity of almost all POM supported materials. All materials were characterized by X-ray diffraction (XRD), scanning electron microscopy observations (SEM), diffuse reflectance spectroscopy (DRS), determination of the conduction and valence band energy by photovoltage measurements, Fourier transform infrared spectroscopy (FTIR), NH 3 -TPD experiments and time resolved microwave conductivity (TRMC).

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Section: Characterization Of the Solidsmentioning

confidence: 99%

Keggin heteropolyacid H3PW12O40 supported on different oxides for catalytic and catalytic photo-assisted propene hydration

Marcı̀

García‐López

Bellardita

et al. 2013

Phys. Chem. Chem. Phys.

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“…1 A number of noncontact characterization techniques, such as microwave detected photoconductance decay (μ-PCD) 1,2 and inductively coupled quasi-steady-state photoconductance (QSSPC), 1,3 have been used for in-line monitoring of contamination and process induced modulation of electrical behaviors of Si. Steady state PCD measurement techniques 4 enabled by improved laser technology were recently introduced.…”

mentioning

confidence: 99%

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Yoo¹,

Kang²,

Murai

et al. 2015

ECS J. Solid State Sci. Technol.

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Photoluminescence (PL) spectra from lightly boron (B) doped p − -Si(100) under 488.0 nm Ar + ion laser excitation over the temperature range of 22 K-290 K is presented. Change of PL peak height (maximum intensity), peak position, peak area (areal intensity), full-width-at-half-maximum (FWHM: peak width) were determined as a function of temperature. PL intensity was sharply decreased with temperature increase in the temperature range of 22 K -170 K and then slowly increased again in the temperature range of 170 K-290 K. Phonon replicas of a relatively sharp band-to-band (or band edge (BE)) PL peak were clearly measured at low temperatures (≤90 K). PL spectra became broader and the phonon replicas were barely distinguishable as the temperature was increased. The envelope of the main PL peak and the broadening of peak width with the Si temperature were qualitatively in good agreement with the Maxell-Boltzmann probability distribution function. The direction of peak position shift with Si temperature change was also in good agreement with the temperature dependence of the Si bandgap. All measured PL spectra were curve fitted using combinations of modified Gaussian function(s) and standard Gaussian function(s). A simplified curve fitting method for broad PL spectra, consisting of the BE peak and band tail peak, using an exponentially modified Gaussian (EMG or ExGaussian) function and a number of standard Gaussian functions, was proposed from a practical usage point of view. Radiative recombination processes in Si and potential industrial applications of the PL characterization technique were discussed. For the characterization of electrical behaviors of Si, resistivity, carrier concentration, mobility and Hall effect measurements were routinely inspected during wafer fabrication and incoming quality control at the wafer fabs.1 A number of noncontact characterization techniques, such as microwave detected photoconductance decay (μ-PCD)1,2 and inductively coupled quasi-steady-state photoconductance (QSSPC), 1,3 have been used for in-line monitoring of contamination and process induced modulation of electrical behaviors of Si. Steady state PCD measurement techniques 4 enabled by improved laser technology were recently introduced.With the introduction of photoluminescence (PL) imaging and spectrum analysis, a noncontact, purely optical technique is now available for spatially resolved electrical characterization. For industrial applications, the ease of measurement without special sample preparation is important. This is especially true for in-line monitoring applications in semiconductor device manufacturers. PL measurements at room temperature (RT) are preferred. However, the RTPL spectra from Si are generally very broad and it is difficult to identify the origin of variations in RTPL spectra. In this paper, temperature dependence of PL spectra from lightly boron (B) doped p − -Si(100) was measured in the temperature range of 22 K-290 K and the effect of temperature on the change of PL spectra was investigated. Practic...

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“…The active donor level must lie much higher to produce this carrier concentration. A deep donor (Ec -0.41 eV) and several deep acceptors states have been observed using deep-level transient spectroscopy (DLTS) [9,10] in heavily-Fe-doped silicon. Kitagawa and coworkers were able to disassociate the deep donor center by annealing.…”

Section: Fe-ion In N-type Siliconmentioning

confidence: 99%

“…Nonlinearity is one of the inherent limitations of TRMC, and only small-signal measurements of ∆σ/σ are meaningful. Kunst and Beck [9] calculated the microwave reflectance of a thick semiconducting medium at microwave frequencies. The calculations show that the reflectivity is about 1.0 near conductivities of 0.01 ohm -1 cm -1 .…”

Section: Time-resolved Microwave Conductivitymentioning

confidence: 99%

Large-signal injection-level spectroscopy of impurities in silicon

Ahrenkiel¹,

Johnston²

1999

AIP Conference Proceedings

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ABSTRACT. Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultrapure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.

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The study of charge carrier kinetics in semiconductors by microwave conductivity measurements

Cited by 307 publications

References 17 publications

Keggin heteropolyacid H3PW12O40 supported on different oxides for catalytic and catalytic photo-assisted propene hydration

Keggin heteropolyacid H3PW12O40 supported on different oxides for catalytic and catalytic photo-assisted propene hydration

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Large-signal injection-level spectroscopy of impurities in silicon

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