The study of barium-gadolinium, barium-yttrium and barium-bismuth double molybdates as a potential active media for microchip Raman lasers

Microchip Raman laser based on Nd:BaGd2(MoO4)4 cleaved crystal, BaWO4 Raman medium and Cr:YAG passive Q-switch

“…To further increase the peak power inside the cavity, a Q-switch with a lower initial transmittance (70%) was tried. In this case, laser oscillations disappeared after several pulses, apparently due to optical damage of the active medium, since the optical damage threshold for BaGd2(MoO4)4 is relatively low compared to known laser crystals (about 500 MW/cm 2 [16]). In the next experiment, BaWO4 crystal was placed between Nd 3+ :BaGd2(MoO4)4 laser medium and Cr 4+ :YAG Q-switch crystal with 80% initial transmission.…”

“…For the quasi-CW laser, the achieved maximum output power was 580 mW with slope efficiency of 60%, and for the passively Q-switched laser, the obtained pulse energy was 3.0 uJ. Since the efficiency of the material is quite high, it is interesting to study Nd 3+ :BaGd2(MoO4)4 as the laser medium of Raman laser, and also as the active medium for self-Raman laser, so far as the crystal has high cross sections of Raman bands comparable to known SRS materials [16]. In this work, a diode-pumped microchip Raman laser based on Nd 3+ :BaGd2(MoO4)4 was experimentally investigated for the first time, to the best of our knowledge.…”

“…Such conditions were favorable for reaching the SRS threshold in the active medium [2]. Unfortunately, apart from 1061.5 nm, no laser oscillations were observed in the range of 1060-1200 nm, where intense Raman lines of BaGd2(MoO4)4 are located [16]. To further increase the peak power inside the cavity, a Q-switch with a lower initial transmittance (70%) was tried.…”

Microchip Raman laser based on Nd:BaGd2(MoO4)4 cleaved crystal, BaWO4 Raman medium and Cr:YAG passive Q-switch

“…For the quasi-CW laser, the achieved maximum output power was 580 mW with slope efficiency of 60%, and for the passively Q-switched laser, the obtained pulse energy was 3.0 uJ. Since the efficiency of the material is quite high, it is interesting to study Nd 3+ :BaGd2(MoO4)4 as the laser medium of Raman laser, and also as the active medium for self-Raman laser, so far as the crystal has high cross sections of Raman bands comparable to known SRS materials [16]. In this work, a diode-pumped microchip Raman laser based on Nd 3+ :BaGd2(MoO4)4 was experimentally investigated for the first time, to the best of our knowledge.…”

“…Such conditions were favorable for reaching the SRS threshold in the active medium [2]. Unfortunately, apart from 1061.5 nm, no laser oscillations were observed in the range of 1060-1200 nm, where intense Raman lines of BaGd2(MoO4)4 are located [16]. To further increase the peak power inside the cavity, a Q-switch with a lower initial transmittance (70%) was tried.…”