Microchip Raman laser based on Nd:BaGd2(MoO4)4 cleaved crystal, BaWO4 Raman medium and Cr:YAG passive Q-switch

Abstract

We present a diode-pumped microchip Raman laser based on Nd3+:BaGd2(MoO4)4 cleaved crystal, BaWO4 Raman medium and Cr4+:YAG passive Q-switch. It has been shown that, using Nd3+:BaGd2(MoO4)4 laser medium, stimulated Raman scattering in an intracavity BaWO4 crystal is simply achievable. When the transmission of the output coupler was 0.3% and 10% at the laser and Stokes wavelengths, respectively, the output energy of the Stokes pulse at 1177 nm was about 1 μJ at a pulse repetition rate of up to 12 kHz. As a result of the work, it has been shown that Nd3+:BaGd2(MoO4)4 is a good candidate as the laser active medium of a Q-switched microchip Raman laser.