The study of atmospheric pressure plasma for surface cleaning

Surface treatment and characterization of ITO thin films using atmospheric pressure plasma for organic light emitting diodes

“…The RMS roughness decreased from 4.6 nm for the untreated ITO to 4.1, 4.1, and 2.8 nm for the O 2 LPP, Ar/O 2 APP, and Ar APP (see Table 8), respectively. Ar/O 2 APP-and O 2 LPPtreated surface were rougher than the Ar APP-treated one due to a sputtering effect [33]. Energetic ion species is more plentifully produced in Ar/O 2 APP and O 2 LPP rather than Ar APP.…”

Characteristics of SiO thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system

“…Recently, AP-PECVD, especially dielectric barrier discharges (DBDs), has been investigated as one of the methods that could deposit materials at a low cost of ownership because it does not require the use of an expensive vacuum processing system and rather, can adopt in-line processing or roll-to-toll processing easily because there is no need of a loadlock system [10,11]. However, the substrate can be easily damaged by the formation of a filamentary discharge in DBD system, especially at a high-power condition for a high-rate deposition or with a high oxygen content to deposit more stoichiometric SiO 2 [12][13][14].…”

Effect of Dielectric in a Plasma Annealing System at Atmospheric Pressure

“…However, this method has some drawbacks: low efficiency due to the division of the annealing and cleaning processes and environmentally harmful because of using chemical to clean thin wire, for example, Tri-chloethane, it is hazardous to human body and has ozone layer effect. The new annealing system in which the annealing and cleaning processes are simultaneously operated in Atmospheric Pressure DielectricBarrier Discharge (APDBD) [5][6][7][8][9] is the potential solution for these drawbacks. In previous studied, it is shown that wire annealing [10,11] and cleaning [12] using APDBD is totally possible.…”